Morphology Simulation for Ion-Assisted Deposition Process
来源期刊：材料热处理学报2004年第5期
论文作者：Jian-Ming Lu Jenn-Sen Lin Shin-Pon Ju
关键词：Molecular dynamics; ion-assisted deposition; Tight-binding potential; Molière potential;
摘 要：The molecular dynamics simulation is applied to investigate the influence of the incident ion energy and incidentangular distribution upon ion-assisted deposition process. The Cu-Cu and Ar-Cu interactions are modeled using the manysurface roughness properties at both transient and final state conditions. The results show that the surface roughness of thedeposition film is lower when more Ar-to-Cu ratio is used at the same incident energy and angle. For the relative low orhigh incident energy, the film morphologies are not sensitive to the incident angle. However, if the incident energy of theargon ions is too high, the film morphology will be worse than that without using the ion-assisted deposition.
Jian-Ming Lu1，Jenn-Sen Lin2，Shin-Pon Ju3
(1.National Cheng-Kung University, Tainan, Taiwan, China;
2.National Unite University, Maio-Li, Taiwan, China;
3.National Sun-Yat-Sen University, Kaohsiung, Taiwan, China)
摘要:The molecular dynamics simulation is applied to investigate the influence of the incident ion energy and incidentangular distribution upon ion-assisted deposition process. The Cu-Cu and Ar-Cu interactions are modeled using the manysurface roughness properties at both transient and final state conditions. The results show that the surface roughness of thedeposition film is lower when more Ar-to-Cu ratio is used at the same incident energy and angle. For the relative low orhigh incident energy, the film morphologies are not sensitive to the incident angle. However, if the incident energy of theargon ions is too high, the film morphology will be worse than that without using the ion-assisted deposition.
关键词:Molecular dynamics; ion-assisted deposition; Tight-binding potential; Molière potential;
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