Impacts of NBTI/PBTI on power gated SRAM
来源期刊：中南大学学报(英文版)2013年第5期
论文作者：HUANG Ping(黄平) XING Zuo-cheng(邢座程)
文章页码：1298 - 1306
Key words：negative bias temperature instability (NBTI); positive bias temperature instability (PBTI); static random access memory (SRAM); power gating
Abstract: A signal probability and activity probability (SPAP) model was proposed firstly, to estimate the impacts of the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) on power gated static random access memory (SRAM). The experiment results show that PBTI has significant influence on the read and write operations of SRAM with power gating, and it deteriorates the NBTI effects and results in a up to 39.38% static noise margin reduction and a 35.7% write margin degradation together with NBTI after 106 s working time. Then, a circuit level simulation was used to verify the assumption of the SPAP model, and finally the statistic data of CPU2000 benchmarks show that the proposed model has a reduction of 3.85% for estimation of the SNM degradation after 106 s working time compared with previous work.
HUANG Ping(黄平)1, 2, XING Zuo-cheng(邢座程)1
(1. School of Computer, National University of Defense Technology, Changsha 410073, China;
2. Computational Aerodynamics Institute, China Aerodynamics Research and Development Center,
Mianyan)
Abstract:A signal probability and activity probability (SPAP) model was proposed firstly, to estimate the impacts of the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) on power gated static random access memory (SRAM). The experiment results show that PBTI has significant influence on the read and write operations of SRAM with power gating, and it deteriorates the NBTI effects and results in a up to 39.38% static noise margin reduction and a 35.7% write margin degradation together with NBTI after 106 s working time. Then, a circuit level simulation was used to verify the assumption of the SPAP model, and finally the statistic data of CPU2000 benchmarks show that the proposed model has a reduction of 3.85% for estimation of the SNM degradation after 106 s working time compared with previous work.
Key words:negative bias temperature instability (NBTI); positive bias temperature instability (PBTI); static random access memory (SRAM); power gating
