Influence of post-grown treatments on CuInS2 thin films prepared by sulphurization of Cu-In films
来源期刊：Rare Metals2008年第5期
论文作者：YAN Youhua, LIU Yingchun, FANG Ling, ZHAO Haihua, LI Deren, LU Zhichao, and ZHOU Shaoxiong Advanced Technology & Materials Co., Ltd., China Iron & Steel Research Institute Group, Beijing , China
文章页码：490 - 495
摘 要：Polycrystalline CuInS2 （CIS） films were prepared by sulphurization of Cu-In films. The surface morphology and phase composition of the as-grown film, the KCN-etched film, and the annealed KCN-etched film were investigated. During the sulphurization, the secondary CuxS phase segregated on the surface of the as-grown films. To improve the crystalline quality of CuInS2 films, a series of post-grown treatments, such as KCN-etching and vacuum annealing KCN-etched films, were performed on the as-grown films. Both as-grown and post-treated films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. The results indicated that a CuxS secondary phase segregated on the surface of the as-grown film, which could be removed effectively by KCN etching. After the vacuum annealing treatment, the KCN-etched film had a sphalerite structure with （112） preferred orientation. Meanwhile, the crystalline quality of the CIS film was significantly improved, which provided a novel method to improve the performance of thin film solar cells.
YAN Youhua, LIU Yingchun, FANG Ling, ZHAO Haihua, LI Deren, LU Zhichao, and ZHOU Shaoxiong Advanced Technology & Materials Co., Ltd., China Iron & Steel Research Institute Group, Beijing 100081, China
摘 要：Polycrystalline CuInS2 （CIS） films were prepared by sulphurization of Cu-In films. The surface morphology and phase composition of the as-grown film, the KCN-etched film, and the annealed KCN-etched film were investigated. During the sulphurization, the secondary CuxS phase segregated on the surface of the as-grown films. To improve the crystalline quality of CuInS2 films, a series of post-grown treatments, such as KCN-etching and vacuum annealing KCN-etched films, were performed on the as-grown films. Both as-grown and post-treated films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. The results indicated that a CuxS secondary phase segregated on the surface of the as-grown film, which could be removed effectively by KCN etching. After the vacuum annealing treatment, the KCN-etched film had a sphalerite structure with （112） preferred orientation. Meanwhile, the crystalline quality of the CIS film was significantly improved, which provided a novel method to improve the performance of thin film solar cells.
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