TRANSMISSION ELECTRON MICROSCOPY INVESTIGATIONS OF LOW-PRESSURE CVD GROWTH AND STRAIN RELAXATION OF Ge ISLANDS ON Si(110)
来源期刊：Acta Metallurgica Sinica2005年第3期
论文作者：E. Spiecker W. J H.M. Lu L. Vescan L.Zhang
Key words：Si-Ge heteroepitaxy; surface; transmission electron microscopy; nanostructure;
Abstract: Shapes, dimensions, arrangements and the microstructure of self-assembled islands fabricated by Iow-pressure chemical vapour deposition (LPCVD) of Ge at 700℃ onto Si(110) substrates have been investigated for different nominal Ge coverage by transmission electron microscopy (TEM)of plan-view and cross-section specimens and have been compared with photoluminescence (PL)measurements of Si-capped layer samples. The transition from the 2-dimensional layer to the 3-dimensional island growth mode takes place for a Ge deposition of nominally less than 2monolayers. Upon this transition, many coherent islands and few larger islands with extended defects are observed. The coherent islands possess a dome-like shape and lateral sizes up to 130nm. Photoluminescence spectra show island-related peaks whose energy positions are shifted towards lower energy with higher Ge coverage.
E. Spiecker1，W. J2，H.M. Lu1，L. Vescan3，L.Zhang1
(1.a;
2.a)ger(a;
3.Institute of Thin Films and Interfaces, Research Center Jülich GmbH, 52425 Jülich, Germany)
Abstract:Shapes, dimensions, arrangements and the microstructure of self-assembled islands fabricated by Iow-pressure chemical vapour deposition (LPCVD) of Ge at 700℃ onto Si(110) substrates have been investigated for different nominal Ge coverage by transmission electron microscopy (TEM)of plan-view and cross-section specimens and have been compared with photoluminescence (PL)measurements of Si-capped layer samples. The transition from the 2-dimensional layer to the 3-dimensional island growth mode takes place for a Ge deposition of nominally less than 2monolayers. Upon this transition, many coherent islands and few larger islands with extended defects are observed. The coherent islands possess a dome-like shape and lateral sizes up to 130nm. Photoluminescence spectra show island-related peaks whose energy positions are shifted towards lower energy with higher Ge coverage.
Key words:Si-Ge heteroepitaxy; surface; transmission electron microscopy; nanostructure;
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