简介概要

Photoluminescent properties of tunable green-emitting oxynitride(Ba3-xSrx)Si6O12N2:Eu2+phosphor and its application in white LEDs

来源期刊:JOURNAL OF RARE EARTHS2013年第10期

论文作者:陈观通 庄卫东 刘荣辉 刘元红 胡运生 何华强

文章页码:944 - 949

摘    要:Green emitting Eu2+-doped(Ba3 x Srx)Si6O12N2solid solutions were synthesized through solid state reaction at 1350 oC for10 h under a N2/H2atmosphere.The XRD patterns revealed that the solid solution series of(Ba3 x y Srx)Si6O12N2:yEu2+with x value ranging from 0–0.6 were established.An efficient and intense tunable green light was observed by varying the cation Sr/Ba ratio.The emission spectra exhibited an entire shift towards long wavelength with increasing of x value,which was caused by large crystal field splitting and Stokes shift.The x value dependence of emission intensity was discovered and explained by the enhanced probability of electron from excited 4f state to 5d ground state via nonradioactive transition.Highly thermal stability and feasible color coordinates were verified.White LEDs with excellent photochromic properties were fabricated by packing GaN based blue chips and(Ba,Sr)3Si6O12N2:Eu2+phosphors.All results indicated that the(Ba3 x Srx)Si6O12N2:Eu2+phosphors were confirmed to be a promising candidate for pc-white LEDs in solid state lighting.

详情信息展示

Photoluminescent properties of tunable green-emitting oxynitride(Ba3-xSrx)Si6O12N2:Eu2+phosphor and its application in white LEDs

陈观通1,2,庄卫东1,2,刘荣辉1,2,刘元红1,2,胡运生1,2,何华强1,2

1. National Engineering Research Center for Rare Earth Materials, General Research Institute for Nonferrous Metals2. Grirem Advanced Materials Co., Ltd.

摘 要:Green emitting Eu2+-doped(Ba3 x Srx)Si6O12N2solid solutions were synthesized through solid state reaction at 1350 oC for10 h under a N2/H2atmosphere.The XRD patterns revealed that the solid solution series of(Ba3 x y Srx)Si6O12N2:yEu2+with x value ranging from 0–0.6 were established.An efficient and intense tunable green light was observed by varying the cation Sr/Ba ratio.The emission spectra exhibited an entire shift towards long wavelength with increasing of x value,which was caused by large crystal field splitting and Stokes shift.The x value dependence of emission intensity was discovered and explained by the enhanced probability of electron from excited 4f state to 5d ground state via nonradioactive transition.Highly thermal stability and feasible color coordinates were verified.White LEDs with excellent photochromic properties were fabricated by packing GaN based blue chips and(Ba,Sr)3Si6O12N2:Eu2+phosphors.All results indicated that the(Ba3 x Srx)Si6O12N2:Eu2+phosphors were confirmed to be a promising candidate for pc-white LEDs in solid state lighting.

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