Sub-bandgap photocurrent response and carrier transport properties of undoped semi-insulating LEG GaAs as a composite
来源期刊：Rare Metals2003年第3期
论文作者：YANG Ruixia,ZHAO Zhengping,LOU Jianzhong,LV Miao,YANG Yongjun,and LIU Lihao) Hebei University of Technology, Tianjin , China) Hebei Semiconductor Research Institute, Shijiazhuang , China
文章页码：179 - 184
摘 要：<正> Undoped （ND） semi-insulating （SI） liquid encapsulated Czochralski （LEG） GaAs crystals were investigated by photocurrent and temperature-dependent Hall measurements. It is indicated that strong nonuniformities in the distributions of impurities and defects can occur for the NDSILEC GaAs crystal grown under a condition with strong constitutional supercooling. In such case, the deep level that dominates Fermi level is spacial location dependent, and the GaAs crystal becomes a composite consisting of a large number of elementary domains with different conductivities. The sub-bandgap photocurrent response and the carrier transport properties for this kind of composite are quite different from those for homogeneous NDSILEC GaAs.
YANG Ruixia,ZHAO Zhengping,LOU Jianzhong,LV Miao,YANG Yongjun,and LIU Lihao1) Hebei University of Technology, Tianjin 300130, China2) Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
摘 要：<正> Undoped （ND） semi-insulating （SI） liquid encapsulated Czochralski （LEG） GaAs crystals were investigated by photocurrent and temperature-dependent Hall measurements. It is indicated that strong nonuniformities in the distributions of impurities and defects can occur for the NDSILEC GaAs crystal grown under a condition with strong constitutional supercooling. In such case, the deep level that dominates Fermi level is spacial location dependent, and the GaAs crystal becomes a composite consisting of a large number of elementary domains with different conductivities. The sub-bandgap photocurrent response and the carrier transport properties for this kind of composite are quite different from those for homogeneous NDSILEC GaAs.
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