简介概要

High entropy(Yb0.25Y0.25Lu0.25Er0.25)2SiO5 with strong anisotropy in thermal expansion

来源期刊:JOURNAL OF MATERIALS SCIENCE TECHNOLOG2020年第1期

论文作者:Heng Chen Huimin Xiang Fu-Zhi Dai Jiachen Liu Yanchun Zhou

文章页码:134 - 139

摘    要:A novel high entropy(HE) rare earth monosilicate(Yb0.25Y0.25Lu0.25Er0.252 SiO5 was synthesized by solid-state reaction method.X-ray diffraction and scanning electron microscopy analysis indicate that a single solid solution is formed with homogeneous distribution of rare-earth elements.HE(Yb0.25Y0.25Lu0.255 Er0.252 SiO5 exhibits excellent phase stability and anisotropy in thermal expansion.The coefficients of thermal expansion(CTEs) in three crystallographic directions are:αa=(2.57±0.07)×10-6 K-1b=(8.07±0.13)×10-6 K-1c=(9.98±0.10)×10-6 K-1.The strong anisotropy in thermal expansion is favorable in minimizing the coating/substrate mismatch if preferred orientation of HE(Yb0.25Y0.25Lu0.25Er0.252 SiO5 is controlled on either metal or ceramic substrate.

详情信息展示

High entropy(Yb0.25Y0.25Lu0.25Er0.25)2SiO5 with strong anisotropy in thermal expansion

Heng Chen1,2,Huimin Xiang2,Fu-Zhi Dai2,Jiachen Liu3,Yanchun Zhou2

1. Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education,School of Materials Science and Engineering, Tianjin University2. Science and Technology on Advanced Functional Composite Laboratory, Aerospace Research Institute of Materials & Processing Technology3. Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials Science and Engineering, Tianjin University

摘 要:A novel high entropy(HE) rare earth monosilicate(Yb0.25Y0.25Lu0.25Er0.252 SiO5 was synthesized by solid-state reaction method.X-ray diffraction and scanning electron microscopy analysis indicate that a single solid solution is formed with homogeneous distribution of rare-earth elements.HE(Yb0.25Y0.25Lu0.255 Er0.252 SiO5 exhibits excellent phase stability and anisotropy in thermal expansion.The coefficients of thermal expansion(CTEs) in three crystallographic directions are:αa=(2.57±0.07)×10-6 K-1b=(8.07±0.13)×10-6 K-1c=(9.98±0.10)×10-6 K-1.The strong anisotropy in thermal expansion is favorable in minimizing the coating/substrate mismatch if preferred orientation of HE(Yb0.25Y0.25Lu0.25Er0.252 SiO5 is controlled on either metal or ceramic substrate.

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