Micro-Raman Spectroscopy for Stress Evaluation of 3C-SiC Epitaxially Grown on Si Substrate by Hot Wall CVD
来源期刊：材料热处理学报2004年第5期
论文作者：PEZZOTTI Giuseppe ZHU Ji-liang ZHU Wen-liang
关键词：Micro-Raman Spectroscopy; Stress Evaluation; 3C-SiC; Epitaxy; Hot Wall CVD;
摘 要：A series of cubic SiC single crystals were heteroepitaxially grown by the hot-wall chemical vapor deposition (CVD) using a HMDS-C3H8-H2 system on 2 inch silicon substrates with the orientations of (100), (111), (110) and (211),respectively. Even though an initial carbonization was carried out to reduce the large lattice mismatch, residual stress could not be completely relieved, partly also due tothe difference of their thermal expansion coefficients. Raman scattering studies for the specimens were performed to estimate the internal stress in the SiC epilayer and the substrate. Raman spectra were mapped out on the sample surface as well as on the cross section using an automated x-y stage with a spatial resolution capable of 100 nm. For all the samples, two Raman peaks corresponding to the transverse optical (TO) and longitudinal optical (LO) phonon modes were observed, even though the intensity varied with the polarization configurations. In the SiC epilayers, tensile stresses decrease away from the interface, while compressive stresses exist in the substrate, with the magnitudes dependent on the growth orientation. The lattice strains were discussed in terms of the elastic deformation theory for the comparison.
PEZZOTTI Giuseppe1，ZHU Ji-liang2，ZHU Wen-liang1
(1.Ceramic Physics Laboratory & Research Institute for Nanoscience, RIN Kyoto Institute of Technology, Sakyo-ku, Matsugasaki, 606-8585, Kyoto, Japan;
2.Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo-ku, Matsugasaki, 606-8585, Kyoto, Japan)
摘要:A series of cubic SiC single crystals were heteroepitaxially grown by the hot-wall chemical vapor deposition (CVD) using a HMDS-C3H8-H2 system on 2 inch silicon substrates with the orientations of (100), (111), (110) and (211),respectively. Even though an initial carbonization was carried out to reduce the large lattice mismatch, residual stress could not be completely relieved, partly also due tothe difference of their thermal expansion coefficients. Raman scattering studies for the specimens were performed to estimate the internal stress in the SiC epilayer and the substrate. Raman spectra were mapped out on the sample surface as well as on the cross section using an automated x-y stage with a spatial resolution capable of 100 nm. For all the samples, two Raman peaks corresponding to the transverse optical (TO) and longitudinal optical (LO) phonon modes were observed, even though the intensity varied with the polarization configurations. In the SiC epilayers, tensile stresses decrease away from the interface, while compressive stresses exist in the substrate, with the magnitudes dependent on the growth orientation. The lattice strains were discussed in terms of the elastic deformation theory for the comparison.
关键词:Micro-Raman Spectroscopy; Stress Evaluation; 3C-SiC; Epitaxy; Hot Wall CVD;
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