Effects of lanthanum ion-implantation on microstructure of oxide film formed on Co-Cr alloy
来源期刊：JOURNAL OF RARE EARTHS2008年第3期
论文作者：ZHANG Linnan ZHOU Xiaowei JIN Huiming
Key words：ion implantation; lanthanum; chromium oxide; raman spectrum; SIMS; rare earths;
Abstract: Isothermal and cyclic oxidizing behavior of Co-40Cr alloy and its lanthanum ion-implanted samples were studied at 1000℃ in the air by thermal-gravimetric analysis (TGA). Scanning electronic microscopy (SEM) and transmission electronic microscopy (TEM) were used to examine the morphology and structure of oxide film after oxidation. Secondary ion mass spectrum (SIMS) method was used to examine the binding energy change of chromium caused by La-doping and its influence on the formation of Cr2O3 film. Laser Raman spectrum was used to examine the stress changes within the oxide film. It was found that lanthanum implantation remarkably reduced isothermal oxidizing rate of Co-40Cr and improved anti-cracking and anti-spalling properties of Cr2O3 oxide film. The reasons for the improvement were mainly that the implanted lanthanum reduced the grain size and internal stress of Cr2O3 oxide and increased high temperature plasticity of the oxide film. Lanthanum mainly existed on the outer surface of Cr2O3 oxide film in the form of fine La2O3 and LaCrO3 spinel particles.
ZHANG Linnan1，ZHOU Xiaowei2，JIN Huiming2
(1.College of Environmental Science and Engineering, Peking University, Beijing 100015, China;
2.Materials Research Center, College of Mechanical Engineering, Yangzhou University, Yangzhou 225009, China)
Abstract:Isothermal and cyclic oxidizing behavior of Co-40Cr alloy and its lanthanum ion-implanted samples were studied at 1000℃ in the air by thermal-gravimetric analysis (TGA). Scanning electronic microscopy (SEM) and transmission electronic microscopy (TEM) were used to examine the morphology and structure of oxide film after oxidation. Secondary ion mass spectrum (SIMS) method was used to examine the binding energy change of chromium caused by La-doping and its influence on the formation of Cr2O3 film. Laser Raman spectrum was used to examine the stress changes within the oxide film. It was found that lanthanum implantation remarkably reduced isothermal oxidizing rate of Co-40Cr and improved anti-cracking and anti-spalling properties of Cr2O3 oxide film. The reasons for the improvement were mainly that the implanted lanthanum reduced the grain size and internal stress of Cr2O3 oxide and increased high temperature plasticity of the oxide film. Lanthanum mainly existed on the outer surface of Cr2O3 oxide film in the form of fine La2O3 and LaCrO3 spinel particles.
Key words:ion implantation; lanthanum; chromium oxide; raman spectrum; SIMS; rare earths;
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