Synthesis and Characterization of Indium Niobium Oxide Thin Films via Sol—Gel Spin Coating Method
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2013年第10期
论文作者：Saeed Mohammadi Mohammad Reza Golobostanfard Hossein Abdizadeh
文章页码：923 - 928
摘 要：In the present study,niobium-doped indium oxide thin films were prepared by solegel spin coating technique.The effects of different Nb-doping contents on structural,morphological,optical,and electrical properties of the films were characterized by means of X-ray diffraction（XRD）,field emission scanning electron microscopy（FESEM）,atomic force microscopy（AFM）,UVeVis spectroscopy,and four point probe methods.XRD analysis confirmed the formation of cubic bixbyite structure of In2O3with a small shift in major peak position toward lower angles with addition of Nb.FESEM micrographs show that grain size decreased with increasing the Nb-doping content.Optical and electrical studies revealed that optimum opto-electronic properties,including minimum electrical resistivity of 119.4 103U cm and an average optical transmittance of 85% in the visible region with a band gap of 3.37 eV were achieved for the films doped with Nb-doping content of 3 at.%.AFM studies show that addition of Nb at optimum content leads to the formation of compact films with smooth surface and less average roughness compared with the prepared In2O3films.
Saeed Mohammadi1，Mohammad Reza Golobostanfard1，Hossein Abdizadeh1,2
1. School of Metallurgy and Materials Engineering,College of Engineering,University of Tehran2. Center of Excellence for High Performance Materials,University of Tehran
摘 要：In the present study,niobium-doped indium oxide thin films were prepared by solegel spin coating technique.The effects of different Nb-doping contents on structural,morphological,optical,and electrical properties of the films were characterized by means of X-ray diffraction（XRD）,field emission scanning electron microscopy（FESEM）,atomic force microscopy（AFM）,UVeVis spectroscopy,and four point probe methods.XRD analysis confirmed the formation of cubic bixbyite structure of In2O3with a small shift in major peak position toward lower angles with addition of Nb.FESEM micrographs show that grain size decreased with increasing the Nb-doping content.Optical and electrical studies revealed that optimum opto-electronic properties,including minimum electrical resistivity of 119.4 103U cm and an average optical transmittance of 85% in the visible region with a band gap of 3.37 eV were achieved for the films doped with Nb-doping content of 3 at.%.AFM studies show that addition of Nb at optimum content leads to the formation of compact films with smooth surface and less average roughness compared with the prepared In2O3films.
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