Growth Kinetic Studies for MOCVD CdTe and HgCdTe Epilayers on GaAs Substrates
来源期刊：Rare Metals1992年第1期
论文作者：徐飞 彭瑞伍 丁永庆
文章页码：13 - 19
摘 要：<正> The growth rates of CdTe and CMT on GaAs and on CdTe / GaAs substrates were studied as a functionof temperature and gas composition. A Langmuir-Hinshelwood Model for surface reaction control region issuggested. The CdTe/GaAs interface was examined by X-ray double crystal diffraction, laser Ramanspectroscopy and transmission electron microscopy （TEM）. A defect layer was observed at CdTe / GaAs inter-face. The relationship between interface qualities and electrical properties of CMT overlayers was discussed.
徐飞，彭瑞伍，丁永庆
摘 要：<正> The growth rates of CdTe and CMT on GaAs and on CdTe / GaAs substrates were studied as a functionof temperature and gas composition. A Langmuir-Hinshelwood Model for surface reaction control region issuggested. The CdTe/GaAs interface was examined by X-ray double crystal diffraction, laser Ramanspectroscopy and transmission electron microscopy （TEM）. A defect layer was observed at CdTe / GaAs inter-face. The relationship between interface qualities and electrical properties of CMT overlayers was discussed.
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