AlGaN/GaN High Electron Mobility Transistors for High-Power and Low-Noise Applications
来源期刊：JOURNAL OF RARE EARTHS2004年增刊第3期
论文作者：Dabiran Amir M Chow Peter P Hartmann Ralf Wang Xiaoguang
Key words：HEMT; in-suit monitoring; performance;
Abstract: The paper different aspects of MBE growth of nitride-based high electron mobility transistor (HEMT) and dilute-nitride, AlGaAsN-based, heterostructures were discussed. New growth and monitoring techniques developed at SVT were described and recent device results were presented.
Dabiran Amir M1，Chow Peter P1，Hartmann Ralf1，Wang Xiaoguang1
(1.SVT Associates, 7620 Executive Drive, Eden Prairie MN 55344, USA;
2.Superior Vacuum Science & Technology Shenyang Ltd., Shenyang 110179, China)
Abstract:The paper different aspects of MBE growth of nitride-based high electron mobility transistor (HEMT) and dilute-nitride, AlGaAsN-based, heterostructures were discussed. New growth and monitoring techniques developed at SVT were described and recent device results were presented.
Key words:HEMT; in-suit monitoring; performance;
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