CALCULATION OF PHASE DIAGRAM FOR PSEUDOBINARY GaAs-InAs

来源期刊：中国有色金属学报(英文版)1994年第4期

论文作者：Qiao Huan Shen Jianyun Li Guoxun Chatillon C

文章页码：25 - 28

Key words：GaAs-InAs; Ⅲ-Ⅴ; compound; calculation of phase diagram; miscibility gap;

Abstract: The phase diagram for the pseudobinary GaAs-InAs has been calculated using the optimized thermodynamic data on accounting the influence of the elastic energy. which is induced by the mismatch of the growing lattice with the substrate in the process of epitaxy. The result shows that the miscibility gap in the solic phase of this system would be restrained by this elastic energy.