Rapidly counting atomic planes of ultra-thin MoSe2 nanosheets（1≤n≤4） on SiO2/Si substrate
来源期刊：Rare Metals2016年第8期
论文作者：Yi-Ping Wang Hui-Jun Zhou Gui-Hua Zhao Tian-Long Xia Lei Wang Le Wang Li-Yuan Zhang
文章页码：632 - 636
摘 要：The optical, thermal and electrical properties of ultra-thin two-dimensional（2D） crystal materials are highly related to their thickness. Therefore, identifying the atomic planes of few-layer crystal materials rapidly is crucial to fundamental study. Here, a simple technique was demonstrated based on optical contrast for counting atomic planes（n） of few-layer MoSe2 on SiO2/Si substrates. It is found that the optical contrast of single-layer MoSe2 depends on light wavelength and thickness of SiO2 on Si substrate. The data calculated based on a Fresnel law-based model as well as atomic force microscopy（AFM） measurements fit well with the values measured by spectroscopic ellipsometer. Furthermore, the calculated and measured contrasts were integral and plotted, which can be used to determine the MoSe2 atomic planes（1≤n≤4）accurately and rapidly.
Yi-Ping Wang1,2，Hui-Jun Zhou1,2，Gui-Hua Zhao1,2，Tian-Long Xia1,2，Lei Wang3，Le Wang1,2，Li-Yuan Zhang1,2
1. Department of Physics, Renmin University of China2. Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano Devices, Renmin University of China3. Department of Power and Electrical Engineering, Northwest A&F University
摘 要：The optical, thermal and electrical properties of ultra-thin two-dimensional（2D） crystal materials are highly related to their thickness. Therefore, identifying the atomic planes of few-layer crystal materials rapidly is crucial to fundamental study. Here, a simple technique was demonstrated based on optical contrast for counting atomic planes（n） of few-layer MoSe2 on SiO2/Si substrates. It is found that the optical contrast of single-layer MoSe2 depends on light wavelength and thickness of SiO2 on Si substrate. The data calculated based on a Fresnel law-based model as well as atomic force microscopy（AFM） measurements fit well with the values measured by spectroscopic ellipsometer. Furthermore, the calculated and measured contrasts were integral and plotted, which can be used to determine the MoSe2 atomic planes（1≤n≤4）accurately and rapidly.
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