1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition
来源期刊：中南大学学报(英文版)2012年第12期
论文作者：GAO Cheng(高成) 李海鸥 HUANG Jiao-ying(黄姣英) DIAO Sheng-long(刁胜龙)
文章页码：3444 - 3448
Key words：metamorphic device; mental organic chemical vapor deposition; high electron mobility transistors; InP substrate; InGaAs
Abstract: InGaAs high electron mobility transistors (HEMTs) on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition (MOCVD). room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm2/V-s with sheet carrier densities larger than 4.6×1012 cm-2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/mm. Excellent depletion-mode operation, with a threshold voltage of -0.3 V and IDSS of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10-8 /cm2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency (fT) and the maximum oscillation frequency (fmax) are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.
GAO Cheng(高成)1, LI Hai-ou (李海鸥)2, HUANG Jiao-ying(黄姣英)1, DIAO Sheng-long(刁胜龙)1
(1. School of Reliability and System Engineering, Beihang University, Beijing 100191, China;
2. Information & Communication College, Guilin University of Electronic Technology, Guilin 541004, China)
Abstract:InGaAs high electron mobility transistors (HEMTs) on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition (MOCVD). room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm2/V-s with sheet carrier densities larger than 4.6×1012 cm-2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/mm. Excellent depletion-mode operation, with a threshold voltage of -0.3 V and IDSS of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10-8 /cm2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency (fT) and the maximum oscillation frequency (fmax) are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.
Key words:metamorphic device; mental organic chemical vapor deposition; high electron mobility transistors; InP substrate; InGaAs
