Photoreflectance Spectroscopy for Study of Si/SiGe/Si Heterostructure
来源期刊：JOURNAL OF RARE EARTHS2004年增刊第2期
论文作者：Lin Huiwang TSIEN Pei-Hsin Liu Zhihong Xiong Xiaoyi CHEN Changchun Dou Weizhi
Key words：SiGe/Si; photoreflectance; UHVCVD;
Abstract: UHVCVD-grown Si/Si1- xGex/Si heterostructure was investigated by Photoreflectance spectroscopy (PR). The principle of PR used in semiconductor film was thoroughly described. According to the E1 transition energy in the Si1- xGex alloy, the Ge content in SiGe film with constant composition can be accurately characterized. In this study, determine the composition uniformity of larger diameter SiGe epiwafer by PR mapping technique was determined. These results show PR is very promising for Si1- xGex epilayer characterization with constant Ge content and can provide film measurements for production-worthy line monitor.
Lin Huiwang1，TSIEN Pei-Hsin1，Liu Zhihong1，Xiong Xiaoyi1，CHEN Changchun1，Dou Weizhi1
(1.Institute of Microelectronics,Tsinghua University,Beijing 100084,China)
Abstract:UHVCVD-grown Si/Si1- xGex/Si heterostructure was investigated by Photoreflectance spectroscopy (PR). The principle of PR used in semiconductor film was thoroughly described. According to the E1 transition energy in the Si1- xGex alloy, the Ge content in SiGe film with constant composition can be accurately characterized. In this study, determine the composition uniformity of larger diameter SiGe epiwafer by PR mapping technique was determined. These results show PR is very promising for Si1- xGex epilayer characterization with constant Ge content and can provide film measurements for production-worthy line monitor.
Key words:SiGe/Si; photoreflectance; UHVCVD;
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