Numerical simulation of effects of cusp magnetic field on oxygen concentration of 300 mm CZ-Si
来源期刊：Rare Metals2012年第5期
论文作者：WANG Yongtao a, b , XU Wenting a, b , DAI Xiaolin a , XIAO Qinghua a , DENG Shujun a , YAN Zhirui a , and ZHOU Qigang a, b a Semiconductor Materials Co., Ltd, General Reseach Institute of Nonferrous Metals, Beijing , China b General Research Institute for Non Ferrous Metals, Beijing , China
文章页码：494 - 499
摘 要：In magnetic Czochralski (MCZ) silicon growth, the distance and diameter of the electrified coils may affect the magnetic field intensity and melt flow. By changing the above parameters, the optimum geometric configuration of the coils was attempted. Through analyses of the oxygen concentration distribution of the crystal/melt interface, axial and radial velocity distribution of melt and the magnetic field intensity in the melt, it is found that smaller diameter of coils contributes to reducing the needed current intensity and production costs. For a given current intensity, there is a best distance of coils when the oxygen concentration at crystal/melt interface reaches the lowest.
WANG Yongtao a, b , XU Wenting a, b , DAI Xiaolin a , XIAO Qinghua a , DENG Shujun a , YAN Zhirui a , and ZHOU Qigang a, b a Semiconductor Materials Co., Ltd, General Reseach Institute of Nonferrous Metals, Beijing 100088, China b General Research Institute for Non Ferrous Metals, Beijing 100088, China
摘 要：In magnetic Czochralski (MCZ) silicon growth, the distance and diameter of the electrified coils may affect the magnetic field intensity and melt flow. By changing the above parameters, the optimum geometric configuration of the coils was attempted. Through analyses of the oxygen concentration distribution of the crystal/melt interface, axial and radial velocity distribution of melt and the magnetic field intensity in the melt, it is found that smaller diameter of coils contributes to reducing the needed current intensity and production costs. For a given current intensity, there is a best distance of coils when the oxygen concentration at crystal/melt interface reaches the lowest.
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