高分子辅助化学溶液沉积法制备涂层导体SrZrO₃(SZO)缓冲层

张  欣¹，王文涛¹，张  勇¹，张  敏¹，张  酣²，雷  鸣¹，赵  勇^{1, 3}

(1. 西南交通大学 超导与新能源研究开发中心 材料先进技术教育部重点实验室，成都 610031；
2. 北京大学 物理系，北京 100871；3. 新南威尔士大学 材料科学与工程学院，澳大利亚 悉尼 2052)

摘 要：采用高分子辅助的化学溶液沉积法，通过720~800 ℃之间进行烧结成相，分别在氩气和空气中SrTiO₃ (STO)单晶基底上沉积得到织构良好的SrZrO₃ (SZO)外延薄膜，重点研究不同热处理气氛对SZO薄膜织构和表面微结 构的影响。结果表明：氩气中制得的SZO外延薄膜c轴取向较好，且表面更加平整致密；氩气中770 ℃制备的SZO薄膜厚度超过230 nm。而空气中制得的SZO薄膜表面呈现局部团聚和开裂。在氩气中采用高分子辅助的化学溶液沉积法有利于制备出低成本、高性能的涂层导体用单一SZO缓冲层。

关键词：涂层导体；SrZrO₃缓冲层；化学溶液沉积法；织构

Preparation of SrZrO₃ (SZO) buffer layer for coated conductors by polymer-assisted chemical solution deposition method

ZHANG Xin¹, WANG Wen-tao¹, ZHANG Yong¹, ZHANG Min¹, ZHANG Han², LEI Ming¹, ZHAO Yong^{1, 3}

(1. Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education,
Southwest Jiaotong University, Chengdu 610031, China;
2. Department of Physics, Peking Univer)

Abstract:The highly epitaxial SrZrO₃ (SZO) buffer layer was deposited on SrTiO₃ single crystal substrate both in Ar and in air by a polymer-assisted chemical solution deposition method at a temperature window of 720?800 ℃, which is a temperature range suitable for mass preparation of coated conductors. The effects of different atmosphere on the quality of final SZO were investigated. The results show that SZO buffer layers yielded in argon displays a smooth and crack-free surface and a good in-plan and out-plan orientation. Especially, the thickness is beyond 230 nm. However, the agglomeration and cracks begin to appear when the SZO buffer layers are fabricated in air. Using polymer-assisted chemical solution deposition method and fabricating in argon may be a effective measure to obtain the thick and high quality single SZO buffer layers.

Key words:coated conductor; SrZrO₃ buffer layer; chemical solution deposition; texture