SiO2基底上化学镀Ni-Mo-P薄膜的生长和形成机理

来源期刊:中国有色金属学报(英文版)2013年第12期

论文作者:王梅玲 杨志刚 张 弛 刘殿龙

文章页码:3629 - 3633

关键词:Ni-Mo-P镀层;诱导沉积;化学镀;SiO2基底

Key words:Ni-Mo-P deposit; induced-deposition; electroless deposition; SiO2 substrate

摘    要:采用化学镀方法在SiO2/Si 基底上制备Cu互联线用阻挡层材料Ni-Mo-P薄膜。采用场发射扫描电子显微镜、电子分散能谱仪、原子力显微镜分析不同沉积时间样品的表面形貌和成分,并对Ni-Mo-P薄膜的形成过程进行研究。Ni-Mo-P薄膜的形成过程分为3个阶段:催化阶段,先前还原的Pd颗粒成为Ni还原的催化形核中心,诱导Ni沉积;覆盖阶段,Ni颗粒诱导Mo、P与之进行共沉积;自生长阶段,Ni-Mo-P薄膜共同沉积,颗粒生长。阐述了还原剂被氧化后产物为 的的反应机理。

Abstract: The diffusion barrier Ni-Mo-P film for Cu interconnects was prepared on SiO2/Si substrate using electroless method. The surface morphology and composition during the formation process of electroless Ni-Mo-P film were investigated through analyzing samples of different deposition time. Induced nucleation, induced co-deposition, and self-induced growth mechanisms involved in electroless process were confirmed by field-emission scanning electron microscopy (FE-SEM), energy dispersive spectrometry and atomic force microscopy (AFM). Firstly, the preceding palladium particles as catalysts induce the nucleation of nickel. Secondly, the nickel particles induce the deposition of molybdenum and phosphorus, which attributes to induced co-deposition. Thirdly, former deposited Ni-Mo-P induces deposition of the latter Ni-Mo-P particles. Moreover, the reaction mechanism was proposed with the oxydate of .

相关论文

  • 暂无!

相关知识点

  • 暂无!

有色金属在线官网  |   会议  |   在线投稿  |   购买纸书  |   科技图书馆

中南大学出版社 技术支持 版权声明   电话:0731-88830515 88830516   传真:0731-88710482   Email:administrator@cnnmol.com

互联网出版许可证:(署)网出证(京)字第342号   京ICP备17050991号-6      京公网安备11010802042557号