Storage and transfer of optical excitation energy in GaInP epilayer:Photoluminescence signatures
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2019年第7期
论文作者：Shijie Xu Ying Huang Zhicheng Su Rongxin Wang Jianrong Dong Deliang Zhu
文章页码：1364 - 1367
摘 要：GaInP alloy could be the most trusted key material for fabricating super-high-efficiency single-and multijunction solar cells, especially for space applications. The storage and transfer of optical excitation energy in this key alloy is thus a key subject of the energy conversion from optical to electrical. In this article we present a study of the subject through investigating photoluminescence（PL） degradation in the GaInP epilayer at 4 K under the continuous optical excitations of ultraviolet（UV） 325 nm, visible 488.0 and 514.5 nm lasers. It is found that the decline of PL intensity with the irradiation time may be represented by I（t）/I0=(1 + tτ-1)-1+C, where I0 is the luminescence intensity at the beginning of irradiation, a time constant, and C a background. Moreover, the PL degradation degree reduces with increasing the excitation wavelength. In addition, some red shift of the PL peak is observed accompanying with the intensity decline under the UV laser excitation. These PL signatures indicate that the localized carriers within the local atomic ordering domains play a major role in the storage and transfer of the excitation energy via photon recycling processes.
Shijie Xu，Ying Huang，Zhicheng Su，Rongxin Wang，Jianrong Dong，Deliang Zhu
Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong KongVacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of SciencesGuangdong Research Center for Interfacial Engineering of Functional Materials, and College of Materials Science and Engineering, Shenzhen University
摘 要：GaInP alloy could be the most trusted key material for fabricating super-high-efficiency single-and multijunction solar cells, especially for space applications. The storage and transfer of optical excitation energy in this key alloy is thus a key subject of the energy conversion from optical to electrical. In this article we present a study of the subject through investigating photoluminescence（PL） degradation in the GaInP epilayer at 4 K under the continuous optical excitations of ultraviolet（UV） 325 nm, visible 488.0 and 514.5 nm lasers. It is found that the decline of PL intensity with the irradiation time may be represented by I（t）/I0=(1 + tτ-1)-1+C, where I0 is the luminescence intensity at the beginning of irradiation, a time constant, and C a background. Moreover, the PL degradation degree reduces with increasing the excitation wavelength. In addition, some red shift of the PL peak is observed accompanying with the intensity decline under the UV laser excitation. These PL signatures indicate that the localized carriers within the local atomic ordering domains play a major role in the storage and transfer of the excitation energy via photon recycling processes.
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