Fabrication and Properties of Ag/Mg0.2Zn0.8O/La0.67Ca0.33MnO/p+-Si Resistive Switching Heterostructure Devices
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2017年第3期
论文作者：韦长成 王华 XU Jiwen ZHANG Yupei CHEN Qisong
文章页码：547 - 551
摘 要：Mg0.2Zn0.8O（MZO）/La0.67Ca0.33MnO（LCMO） heterostructure was deposited on p+-Si substrates by sol-gel spin coating technique. The Ag/MZO/LCMO/p+-Si devices exhibit a bipolar, reversible, and remarkable current-voltage characteristic at room temperature. An obvious multilevel resistive switching effect is observed in the devices. The dominant conduction mechanism of the devices is trap-controlled space charge limited current. The resistance ratio of high resistance state and low resistance state of the devices is about six orders of magnitude, and the degradation is invisible in the devices after 250 successive switching cycles. The present results suggest that the Ag/MZO/LCMO/p+-Si devices may be a potential and multilevel candidate for nonvolatile memory application.
韦长成，王华，XU Jiwen，ZHANG Yupei，CHEN Qisong
School of Materials Science and Engineering, Guilin University of Electronic Technology
摘 要：Mg0.2Zn0.8O（MZO）/La0.67Ca0.33MnO（LCMO） heterostructure was deposited on p+-Si substrates by sol-gel spin coating technique. The Ag/MZO/LCMO/p+-Si devices exhibit a bipolar, reversible, and remarkable current-voltage characteristic at room temperature. An obvious multilevel resistive switching effect is observed in the devices. The dominant conduction mechanism of the devices is trap-controlled space charge limited current. The resistance ratio of high resistance state and low resistance state of the devices is about six orders of magnitude, and the degradation is invisible in the devices after 250 successive switching cycles. The present results suggest that the Ag/MZO/LCMO/p+-Si devices may be a potential and multilevel candidate for nonvolatile memory application.
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