简介概要

One-step fabrication of ultrathin layered 1T@2H phase MoS2 with high catalytic activity based counter electrode for photovoltaic devices

来源期刊:JOURNAL OF MATERIALS SCIENCE TECHNOLOG2020年第16期

论文作者:K.Silambarasan J.Archana S.Harish M.Navaneethan R.Sankar Ganesh S.Ponnusamy C.Muthamizhchelvan K.Hara

文章页码:94 - 101

摘    要:The metallic phase of molybdenum disulfide(M-MoS2) and semiconductor phase of molybdenum disulfide(S-MoS2) was synthesized by hydrothermal method,using cetyltrimethylammonium bromide(CTAB) as a surfactant.The structural and elemental composition confirmed the formation of M-MoS2 and S-MoS2.From the morphological analysis layered nanosheets with an inter-layered distance of 0.62 nm for M-MoS2 and 0.95 nm for S-MoS2 was observed.Fourier-transform infrared(FT-IR) spectral analysis was used to investigate the existence of CTAB functional group.The peak at 885 cm-1 attributed to the CH3 bond which confirmed the presence of CTAB in the S-MoS2.The anodic and cathodic peak separation(Epp) values of the counter electrode(CE) has showed at 468.28 mV(M-MoS2) and 540.87 mV(S-MoS2).The M-MoS2 thin film shows higher catalytic activity when compared to S-MoS2 due to more active sites and electronic conductivity.The power conversion efficiency of M-MoS2 CE based device exhibits higher efficiency compared to S-MoS2 CE based device.

详情信息展示

One-step fabrication of ultrathin layered 1T@2H phase MoS2 with high catalytic activity based counter electrode for photovoltaic devices

K.Silambarasan1,J.Archana1,S.Harish1,2,M.Navaneethan1,3,R.Sankar Ganesh1,S.Ponnusamy1,C.Muthamizhchelvan1,K.Hara4,2

1. Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology2. Graduate School of Science and Technology, Shizuoka University3. Nanotechnology Research Center(NRC), Faculty of Engineering and Technology, SRM Institute of Science and Technology4. Research Institute of Electronics, Shizuoka University

摘 要:The metallic phase of molybdenum disulfide(M-MoS2) and semiconductor phase of molybdenum disulfide(S-MoS2) was synthesized by hydrothermal method,using cetyltrimethylammonium bromide(CTAB) as a surfactant.The structural and elemental composition confirmed the formation of M-MoS2 and S-MoS2.From the morphological analysis layered nanosheets with an inter-layered distance of 0.62 nm for M-MoS2 and 0.95 nm for S-MoS2 was observed.Fourier-transform infrared(FT-IR) spectral analysis was used to investigate the existence of CTAB functional group.The peak at 885 cm-1 attributed to the CH3 bond which confirmed the presence of CTAB in the S-MoS2.The anodic and cathodic peak separation(Epp) values of the counter electrode(CE) has showed at 468.28 mV(M-MoS2) and 540.87 mV(S-MoS2).The M-MoS2 thin film shows higher catalytic activity when compared to S-MoS2 due to more active sites and electronic conductivity.The power conversion efficiency of M-MoS2 CE based device exhibits higher efficiency compared to S-MoS2 CE based device.

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