60Co Gamma Irradiation and Annealing Effects on Transport Properties of Antimony Telluride Platelets Grown by Physical Vapor Deposition
来源期刊：Acta Metallurgica Sinica2015年第5期
论文作者：Thankamma George A.G.Kunjomana
文章页码：559 - 566
摘 要：Physical vapor deposition method was employed to deposit antimony telluride（Sb2Te3） crystals in a dual-zone furnace. The microstructure, surface topography and composition of samples were characterized using X-ray diffraction,atomic force and scanning electron microscopy. Seebeck coefficient（S\c）, electrical conductivity（r\c） as well as power factor（PF） were enhanced for pure Sb2Te3 samples upon annealing, and the samples annealed at 473 K exhibited the highest PF of 3.16 9 10-3W m-1K-2with an enhancement of 22% in the figure of merit（Z）. When the delivered dose of60 Co gamma radiation was increased from 0 to 30 k Gy in the stoichiometric crystals, r\c decreased due to the decrease in mobility. As a result of the increase in S, PF and Z improved by 12.11 and 13.7%, respectively, in the 30 k Gy gammairradiated crystals. Both RH（B||c） and S\c were positive, suggesting that the prepared Sb2Te3 crystals retained the p-type semiconductivity after these treatments.
Thankamma George，A.G.Kunjomana
Crystal Research Centre, Department of Physics, Christ University
摘 要：Physical vapor deposition method was employed to deposit antimony telluride（Sb2Te3） crystals in a dual-zone furnace. The microstructure, surface topography and composition of samples were characterized using X-ray diffraction,atomic force and scanning electron microscopy. Seebeck coefficient（S\c）, electrical conductivity（r\c） as well as power factor（PF） were enhanced for pure Sb2Te3 samples upon annealing, and the samples annealed at 473 K exhibited the highest PF of 3.16 9 10-3W m-1K-2with an enhancement of 22% in the figure of merit（Z）. When the delivered dose of60 Co gamma radiation was increased from 0 to 30 k Gy in the stoichiometric crystals, r\c decreased due to the decrease in mobility. As a result of the increase in S, PF and Z improved by 12.11 and 13.7%, respectively, in the 30 k Gy gammairradiated crystals. Both RH（B||c） and S\c were positive, suggesting that the prepared Sb2Te3 crystals retained the p-type semiconductivity after these treatments.
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