Structural and magnetic properties of ZnFe₂O₄ films deposited by low sputtering power

Jin-long Li 1,2),Zhong Yu 1),Ke Sun 1),Xiao-na Jiang 1),and Zhong-wen Lan 1) 1) State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China 2) No.24 Research Institute of China Electronics Technology Group Corporation,Chongqing 400060,China

摘 要：To validate the correctness of the Hartman-Perdok Theory（HPT）,which indicates that the {111} planes have the lowest surface energy in spinel ferrites,the {111} plane orientated ZnFe₂O₄ thin films on Si（100）,Si（111）,and SiO 2（500 nm）Si（111） substrates were obtained through a radio frequency（RF） magnetron sputtering method with a low sputtering power of 80 W.All of the experiments prove that the atom energy determined by sputtering power plays an important role in the orientated growth of the ZnFe 2 O 4 thin films,and it matches well with HPT.The ZnFe₂O₄ thin films exhibit ferromagnetism with a magnetization of 84.25 kJmol at room temperature,which is different from the bulk counterpart（antiferromagnetic as usual）.The ZnFe₂O₄ thin films can be used as high-quality oriented inducing buffer layers for other spinel（Ni,Mn）Zn ferrite thin films and may have high potential in magnetic thin films-based devices.

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