Oxidation Kinetics of (111) Silicon Monocrystal and Morphology of Oxide Film in Dry Oxygen Atmosphere
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG1989年第5期
论文作者：李文超 樊自拴 孙贵如 秦福
文章页码：362 - 365
摘 要：<正> 1. Introduction Thermal oxidation of silicon monocrystalis a very important process in fabricationof metal--oxide--semiconductor （MOS） devices.In recent years it has received great atten-tion. Various proposals for oxidation modeshave been made by different groups.Now most of the authors working in thisfield hold the view that the oxidation rateof silicon obeys a typical parabolic rule,that is, the oxidation reaction is controlledby diffusion. The experimental data inRef. can be taken and a kinetic curve
李文超，樊自拴，孙贵如，秦福
摘 要：<正> 1. Introduction Thermal oxidation of silicon monocrystalis a very important process in fabricationof metal--oxide--semiconductor （MOS） devices.In recent years it has received great atten-tion. Various proposals for oxidation modeshave been made by different groups.Now most of the authors working in thisfield hold the view that the oxidation rateof silicon obeys a typical parabolic rule,that is, the oxidation reaction is controlledby diffusion. The experimental data inRef. can be taken and a kinetic curve
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