Preparation and properties of SrBi2.2Ta2O9 thin film①
来源期刊：中南大学学报(英文版)2005年第4期
论文作者：王文 贾德昌 周玉
文章页码：376 - 379
Key words：SrBi2.2Ta2O9; sol-gel technique; thin film; ferroelectric
Abstract: SrBi2.2Ta2O9 (SBT) thin film with thickness of 2μm was successfully prepared by sol-gel method, using strontium acetate semihydrate [Sr(CH3COO)2·1/2H2O] and bismth subnitrate [BiO(NO3)], and tantalum ethox-ide [Ta(OCH2CH3)5] as source materials, glacial acetic and ethylene glycol as solvents. The X-ray diffraction (XRD) and transmission electron microscope(TEM) results indicate that SBT layer-perovskite phase obtained has to be single phase, SBT thin film is formed after being annealed at 800℃for 1 min. The typical hysteresis loop of SBT thin film on Pt/Ti/SiO2/Si is obtained, and the measured polarization value of the SBT thin film is 4.2μC/cm2.
