Molecular Beam Epitaxial Growth of Pb1-xEuxSeyTe1-y Double Heterostructure
来源期刊：Journal of Rare Earths1992年第3期
论文作者：宋航 陈伟立 史智盛 付义
文章页码：204 - 207
摘 要：<正> A Pb1-xEuxSeyTe1-y double heterostructure was grown successfully on a p-type （100）oriented PbTesubstrate by molecular beam epitaxy.In order to obtain semiconductor laser emitting at 2～4 μm,the band gapof the active region can be adjusted by controlling Eu composition （x value） in the active region.It was obtainedthat x=0.012,y=0.016 for the active region and x=0.030,y=0.016 for the confinement layers.The resultsmeasured from SEM and electrical properties show that the Pb1-xEuxSeyTe1-y double heterostructure has ahomogeneous morphology and an obvious junction character.
宋航，陈伟立，史智盛，付义
摘 要：<正> A Pb1-xEuxSeyTe1-y double heterostructure was grown successfully on a p-type （100）oriented PbTesubstrate by molecular beam epitaxy.In order to obtain semiconductor laser emitting at 2～4 μm,the band gapof the active region can be adjusted by controlling Eu composition （x value） in the active region.It was obtainedthat x=0.012,y=0.016 for the active region and x=0.030,y=0.016 for the confinement layers.The resultsmeasured from SEM and electrical properties show that the Pb1-xEuxSeyTe1-y double heterostructure has ahomogeneous morphology and an obvious junction character.
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