Thermal expansion of lattice parameter of (powder) silicon up to 1473 K
来源期刊：Rare Metals2004年第4期
论文作者：XING Xianran, CHEN Jun, DENG Jinxia, and LIU GuirongDepartment of Physical Chemistry, University of Science and Technology Beijing, Beijing , China
文章页码：364 - 367
摘 要：<正>The XRPD （X-ray powder diffxactometry） patterns of silicon powder with a unit cell structure of diamond were determined from 298 to 1473 K. Lattice parameters of Si linearly increase with temperature. The thermal shifts of the positions of all reflection peaks are linearly correlated with the temperature. The coefficients of the intrinsic linear thermal expansion and volumetric thermal expansion were determined as 3.87×10-6/K and 1.16×10-5/K respectively. It indicates that Si is still a suitable standard in the XRPD method at high temperatures.
XING Xianran, CHEN Jun, DENG Jinxia, and LIU GuirongDepartment of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
摘 要：<正>The XRPD （X-ray powder diffxactometry） patterns of silicon powder with a unit cell structure of diamond were determined from 298 to 1473 K. Lattice parameters of Si linearly increase with temperature. The thermal shifts of the positions of all reflection peaks are linearly correlated with the temperature. The coefficients of the intrinsic linear thermal expansion and volumetric thermal expansion were determined as 3.87×10-6/K and 1.16×10-5/K respectively. It indicates that Si is still a suitable standard in the XRPD method at high temperatures.
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