InAs Nanowire Devices with Strong Gate Tunability:Fundamental Electron Transport Properties and Application Prospects:A Review
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2015年第6期
论文作者：Dong Liang Juan Du Xuan P.A.Gao
文章页码：542 - 555
摘 要：The high electron mobility has granted indium arsenide（InAs） nanowires（NWs） as an important class of nanomaterials for high performance electronics such as field-effect transistors（FETs）.We reviewed recent progresses on the studies of quantum coherence,gate tunable one-dimensional（1D） confinement and spin orbit interaction（SOI） in InAs NW based electronic and thermoelectric transport devices.We also demonstrated gas sensing response of InAs NW FETs and elucidated the mechanism via a gating experiment.By using InAs NWs as an example,these fundamental transport studies have shed important lights on the potential thermoelectric,spintronic and gas sensing applications of semiconductor NWs where the 1D confinement,SOI or surface states effects are exploited.
Dong Liang1,2，Juan Du3，Xuan P.A.Gao1
1. Department of Physics,Case Western Reserve University2. Department of Chemistry,University of Wisconsin-Madison3. Key Laboratory of Magnetic Materials and Devices,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences
摘 要：The high electron mobility has granted indium arsenide（InAs） nanowires（NWs） as an important class of nanomaterials for high performance electronics such as field-effect transistors（FETs）.We reviewed recent progresses on the studies of quantum coherence,gate tunable one-dimensional（1D） confinement and spin orbit interaction（SOI） in InAs NW based electronic and thermoelectric transport devices.We also demonstrated gas sensing response of InAs NW FETs and elucidated the mechanism via a gating experiment.By using InAs NWs as an example,these fundamental transport studies have shed important lights on the potential thermoelectric,spintronic and gas sensing applications of semiconductor NWs where the 1D confinement,SOI or surface states effects are exploited.
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