Growth and characterizations of CdGeAs2single crystal by descending crucible with rotation method
来源期刊：Rare Metals2014年第2期
论文作者：Wei Huang Bei-Jun Zhao Shi-Fu Zhu Zhi-Yu He Bao-Jun Chen Jing-Jing Tang Wei-Jia Liu
文章页码：210 - 214
摘 要：By the method of descending crucible with rotation, crack-free CdGeAs2single crystals of U15 mm 950 mm were grown in a furnace with three independen heating zones after optimizing the temperature field, and the descending and rotational speed to meet the need of CdGeAs2crystal growth. The properties of as-grown crysta were characterized by a variety of techniques. The results of X-ray diffraction（XRD） show that there are two cleavage faces, which are（110） and（101）. The peaks are in high intensity and good symmetry, which demonstrates that the crystal is integral in structure and well crystallized. The energy-dispersive spectrometry results indicate that the wafer of the CdGeAs2crystal is closer to the stoichiometry The IR transmittance of the wafer is *48.6 % at 5.5 lm, and the maximum value is up to 51.6 % in the range of2.3–18.0 lm. Etch pits of（001） face are observed and the density of the etch pits is evaluated to be 1 9 105cm-2.
Wei Huang，Bei-Jun Zhao，Shi-Fu Zhu，Zhi-Yu He，Bao-Jun Chen，Jing-Jing Tang，Wei-Jia Liu
Department of Materials Science, Sichuan University
摘 要：By the method of descending crucible with rotation, crack-free CdGeAs2single crystals of U15 mm 950 mm were grown in a furnace with three independen heating zones after optimizing the temperature field, and the descending and rotational speed to meet the need of CdGeAs2crystal growth. The properties of as-grown crysta were characterized by a variety of techniques. The results of X-ray diffraction（XRD） show that there are two cleavage faces, which are（110） and（101）. The peaks are in high intensity and good symmetry, which demonstrates that the crystal is integral in structure and well crystallized. The energy-dispersive spectrometry results indicate that the wafer of the CdGeAs2crystal is closer to the stoichiometry The IR transmittance of the wafer is *48.6 % at 5.5 lm, and the maximum value is up to 51.6 % in the range of2.3–18.0 lm. Etch pits of（001） face are observed and the density of the etch pits is evaluated to be 1 9 105cm-2.
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