简介概要

2H-SiC Dendritic Nanocrystals In Situ Formation from Amorphous Silicon Carbide under Electron Beam Irradiation

来源期刊:JOURNAL OF RARE EARTHS2006年增刊第1期

论文作者:Jiang Minhua Xu Xiangang Dong Jie Jiang Shouzheng Li Xianxiang Hu Xiaobo

Key words:electron beam irradiation; 2H-SiC dendritic nanocrystal; amorphous silicon carbide;

Abstract: Under electron beam irradiation, the in-situ formation of 2H-SiC dentritic nanocrystals from amorphous silicon carbide at room temperature was observed. The homogenous transition mainly occurs at the thin edge and on the surface of specimen where the energy obtained from electron beam irradiation is high enough to cause the amorphous crystallizing into 2H-SiC.

详情信息展示

2H-SiC Dendritic Nanocrystals In Situ Formation from Amorphous Silicon Carbide under Electron Beam Irradiation

Jiang Minhua1,Xu Xiangang1,Dong Jie1,Jiang Shouzheng1,Li Xianxiang1,Hu Xiaobo1

(1.State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China)

Abstract:Under electron beam irradiation, the in-situ formation of 2H-SiC dentritic nanocrystals from amorphous silicon carbide at room temperature was observed. The homogenous transition mainly occurs at the thin edge and on the surface of specimen where the energy obtained from electron beam irradiation is high enough to cause the amorphous crystallizing into 2H-SiC.

Key words:electron beam irradiation; 2H-SiC dendritic nanocrystal; amorphous silicon carbide;

【全文内容正在添加中】

<上一页 1 下一页 >

相关论文

  • 暂无!

相关知识点

  • 暂无!

有色金属在线官网  |   会议  |   在线投稿  |   购买纸书  |   科技图书馆

中南大学出版社 技术支持 版权声明   电话:0731-88830515 88830516   传真:0731-88710482   Email:administrator@cnnmol.com

互联网出版许可证:(署)网出证(京)字第342号   京ICP备17050991号-6      京公网安备11010802042557号