Electrical properties of HfTiO Gate Dielectric Ge MOS capacitors with wet-No surface pretreatment
来源期刊：功能材料与器件学报2009年第6期
论文作者：ZOU Xiao XU Jing-ping
关键词：Ge MOS; HfTiO,equivalent oxide thickness; interface states;
摘 要：Surface pretreatments for preparing HfTiO/GeO_xN_y stack gate dielectric on n-Ge substrate have been investigated.Excellent performances of Al/HfTiO/GeO_x N_y/n-Ge MOS capacitor have been achieved with an equivalent oxide thickness of 1.44 nm,physical thickness of 7.2 nm,equivalent permittivity of～35.interface-state density of 2.1×10~(11)eV~(-1)cm~(-2),equivalent oxide charge of -1.96×10~(12)cm~(-2) and gate leakage current of 2.71×10~(-4)A/cm~2 at V_g=1 V.Experimental results also indicate that the wet NO pretreatment can lead to excellent interface and gate leakage properties.The involved mechanisms lie in N-barrier role and N incorporation in GeO_xN_y interlayer,effectively preventing further growth of unstable GeO_x during subsequent processing.
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摘要:Surface pretreatments for preparing HfTiO/GeO_xN_y stack gate dielectric on n-Ge substrate have been investigated.Excellent performances of Al/HfTiO/GeO_x N_y/n-Ge MOS capacitor have been achieved with an equivalent oxide thickness of 1.44 nm,physical thickness of 7.2 nm,equivalent permittivity of～35.interface-state density of 2.1×10~(11)eV~(-1)cm~(-2),equivalent oxide charge of -1.96×10~(12)cm~(-2) and gate leakage current of 2.71×10~(-4)A/cm~2 at V_g=1 V.Experimental results also indicate that the wet NO pretreatment can lead to excellent interface and gate leakage properties.The involved mechanisms lie in N-barrier role and N incorporation in GeO_xN_y interlayer,effectively preventing further growth of unstable GeO_x during subsequent processing.
关键词:Ge MOS; HfTiO,equivalent oxide thickness; interface states;
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