DIAMOND HETEROEPITAXY-NUCLEATION, INTERFACE STRUCTURE, FILM GROWTH
来源期刊：Acta Metallurgica Sinica2001年第6期
论文作者：X.Jiang W Jager
Key words：diamond heteroepitaxy; electron microscopy; interfaces; crystal defects; chemical vapour deposition;
Abstract: The present understanding of diamond heteroepitaxy by bias-enhanced chemicalvapour deposition on technologically relevant substrate materials is briefly re vi(wed.First the early stages of diamond nucleation and the diamond film growth as wellas influences of various deposition conditions are described. Then the results of mi-croscopic investigations of the structure of interfaces and of grain boundaries aresummarized.
X.Jiang1，W Jager2
(1.Fraunhofer-Institute for Surface Engineering and Thin Films,D-38108 Braunschweig,Germany;
2.Faculty of Engineering, Christian-Albrechts-University Kiel, D-24143 Kiel. Germany)
Abstract:The present understanding of diamond heteroepitaxy by bias-enhanced chemicalvapour deposition on technologically relevant substrate materials is briefly re vi(wed.First the early stages of diamond nucleation and the diamond film growth as wellas influences of various deposition conditions are described. Then the results of mi-croscopic investigations of the structure of interfaces and of grain boundaries aresummarized.
Key words:diamond heteroepitaxy; electron microscopy; interfaces; crystal defects; chemical vapour deposition;
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