Radiation-induced defects in different silicon （111） wafers by 400 keV electron irradiation
来源期刊：Rare Metals2012年第3期
论文作者：GAO Hui, WANG Heyi, and YUAN Yonggang Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang , China
文章页码：290 - 295
摘 要：The energy deposition for low-energy electron beam on Si-SiO2 models was calculated by Monte-Carlo method. Making use of electron paramagnetic resonance （EPR） technique, an investigation of the effect of dopant type and concentration on EPR signal variations was carried out by using p-type and n-type silicon（111） wafers with concentration of 1×1015 cm 3 and 1×1017 cm 3, and the changes of intensity of defect paramagnetic centers before and after irradiation of electrons were compared. The chemical states of Si-SiO2 structure were determined by X-ray photoelectrons spectroscopy（XPS）. The results clearly indicate that the effects of dopant variations （type and concentration） are of obvious difference. Compared with p-type silicon, n-type silicon, especially with higher dopant concentration, tends to produce defect at the interface under low-energy electron irradiation with certain flux, which arises from the hole trapped on a nonbridging oxygen atom bonded to P. It is represented in the form of distinct changes of POHC intensity and P2P spectrum. According to the theoretical and experimental data, the relationship among electron energy deposition, chemical states of element Si at SiO2 -Si（111） interface, and radiation effect were analyzed and discussed.
摘要：The energy deposition for low-energy electron beam on Si-SiO2 models was calculated by Monte-Carlo method. Making use of electron paramagnetic resonance （EPR） technique, an investigation of the effect of dopant type and concentration on EPR signal variations was carried out by using p-type and n-type silicon（111） wafers with concentration of 1×1015 cm 3 and 1×1017 cm 3, and the changes of intensity of defect paramagnetic centers before and after irradiation of electrons were compared. The chemical states of Si-SiO2 structure were determined by X-ray photoelectrons spectroscopy（XPS）. The results clearly indicate that the effects of dopant variations （type and concentration） are of obvious difference. Compared with p-type silicon, n-type silicon, especially with higher dopant concentration, tends to produce defect at the interface under low-energy electron irradiation with certain flux, which arises from the hole trapped on a nonbridging oxygen atom bonded to P. It is represented in the form of distinct changes of POHC intensity and P2P spectrum. According to the theoretical and experimental data, the relationship among electron energy deposition, chemical states of element Si at SiO2 -Si（111） interface, and radiation effect were analyzed and discussed.
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