A study of the crystallization kinetics of Ge-Te amorphous systems

Feng Yan1), Tiejun Zhu1), Xinbing Zhao1), and Shurong Dong2) 1) State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China 2) Department of Information and Electronics Engineering, Zhejiang University, Hangzhou 310027, China

摘 要：The glass-forming ability of binary GexTe100-x （x=15, 20, 30） alloys was investigated. The crystallization mechanism of these amorphous bulks was studied by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and differential scanning calo- rimetry （DSC）. The temperature of glass transition, the temperature of crystallization, the activation energy for glass transition and crystallization, and the order of the crystallization mechanism were calculated from the different heating-rates.

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