Enhancing point defect scattering in copper antimony selenides via Sm and S Co-doping
来源期刊:Rare Metals2018年第4期
论文作者:Tian-Hua Zou Tian-Hua Zou Marc Widenmeyer Xing-Xing Xiao Xiao-Yin Qin Anke Weidenkaff
文章页码:290 - 299
摘 要:Doping-and alloying-induced point defects lead to mass and strain field fluctuations which can be used as effective strategies to decrease the lattice thermal conductivity and consequently boost the performance of thermoelectric materials. Herein, we report the effects of Sm and S co-doping on thermoelectric transport properties of copper antimony selenides in the temperature range of300 K < T < 650 K. Through the Callaway model, it demonstrates that Sm and S co-doping induces strong mass differences and strain field fluctuations in Cu3 SbSe4. The results prove that doping with suitable elements can increase point defect scattering of heat-carrying phonons,leading to a lower thermal conductivity and a better thermoelectric performance. The highest figure of merit(ZT)of ~0.55 at 648 K is obtained for the Sm and S co-doped sample with nominal composition of Cu2.995Sm0.005SbSe3.95S0.05, which is about 55% increase compared to the ZT of pristine Cu3 SbSe4.
稀有金属(英文版) 2018,37(04),290-299
Tian-Hua Zou Wen-Jie Xie Marc Widenmeyer Xing-Xing Xiao Xiao-Yin Qin Anke Weidenkaff
Institute for Materials Seience, University of Stuttgart
Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences
收稿日期:13 December 2017
基金:financially supported by the German Research Foundation within the DFG Priority Program SPP 1386 (No.WE 2803/2-2);Federal Ministry for Economics Affairs and Energy (BMWI)(No. Nr 19U15006F);
Tian-Hua Zou Wen-Jie Xie Marc Widenmeyer Xing-Xing Xiao Xiao-Yin Qin Anke Weidenkaff
Institute for Materials Seience, University of Stuttgart
Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences
Abstract:
Doping-and alloying-induced point defects lead to mass and strain field fluctuations which can be used as effective strategies to decrease the lattice thermal conductivity and consequently boost the performance of thermoelectric materials. Herein, we report the effects of Sm and S co-doping on thermoelectric transport properties of copper antimony selenides in the temperature range of300 K < T < 650 K. Through the Callaway model, it demonstrates that Sm and S co-doping induces strong mass differences and strain field fluctuations in Cu3 SbSe4. The results prove that doping with suitable elements can increase point defect scattering of heat-carrying phonons,leading to a lower thermal conductivity and a better thermoelectric performance. The highest figure of merit(ZT)of ~0.55 at 648 K is obtained for the Sm and S co-doped sample with nominal composition of Cu2.995Sm0.005SbSe3.95S0.05, which is about 55% increase compared to the ZT of pristine Cu3 SbSe4.
Keyword:
Thermoelectric; Point defect scattering; Cu3SbSe4; Lattice thermal conductivity;
Author: Anke Weidenkaff e-mail:weidenkaff@imw.uni-stuttgart.de;
Received: 13 December 2017
1 Introduction
Thermoelectricity,a technology to convert heat into electricity directly,is a potential alternative to recover waste heat and partially solve the energy harvesting issue
Recently,Cu-based materials have attracted great attention due to their interesting electronic and thermal transport properties
In this work,Sm was introduced into the copper selenide matrix material,leading to extra hole donors in addition to S co-doping.Increasing Sm content leads to an enhancement of the hole concentration,which can be related to a complex defect chemistry and the introduction of additional point defects due to the large mass difference between Sm (150.36 g.mol-1) and Cu (63.546 g·mol-1).Here,we report the electrical and thermal transport properties of Sm/S co-doped Cu3SbSe4 and utilize the Callaway model to analyze the role that the co-doping plays in the reduction in the lattice thermal conductivity.
2 Experimental
Polycrystalline copper antimony selenides with nominal samarium and sulfur contents“Cu3-xSmxSbSe4-ySy(x=0,0.0050,0.0075 and y=0,0.05,0.10,0.15)”were synthesized by melting high-purity elemental Cu (99.9%,powder),Sb (99.999%,shot),Se (99.999%,shot),Sm(99.999%,powder) and S (99.9%,powder) in respective stoichiometric proportions.The samples will be abbreviated in the following as CSS:(Sm-x,S-y) for co-doped CSS.The compositions described below are nominal composition,unless stated otherwise.All raw materials were sealed in quartz glass tubes under high vacuum.The tubes were heated to 1173 K for 12 h,cooled to 823 K and finally quenched in ice water.After quenching,samples were annealed at 623 K for 48 h to promote homogeneity.The ingots were pulverized into fine powders.Bulk samples were obtained by spark plasma sintering (SPS) for 5 min at653 K under a pressure of 50 MPa.The relative densities of the bulk samples after SPS exceeded 94%.
X-ray diffraction (XRD) with Cu Kαradiation (Rigaku Smartlab,Cu Kβfilter) was used to ensure the phase purity of the CSS:(Sm-x,S-y) samples.S ample compositions were determined by inductively coupled plasma atomic emission spectroscopy (ICP-AES,Spectro Ciros CCD ICP-OES instrument).Scanning electron microscope (SEM,Hitachi S4800) was used to analyze the microstructures of the bulk samples after SPS.Electrical resistivity and thermopower were measured by a ZEM-3 (ULVAC-RIKO
3 Results and discussion
3.1 Crystal structure and microstructure
XRD patterns of the CSS:(Sm-x,S-y) samples are shown in Fig.1a.All diffraction reflections can be well indexed to the tetragonal Cu3SbSe4 structure (standard JCPDS No.85-0003;space group
3.2 Electrical transport properties
The temperature dependence of the electrical resistivity of the Sm and S co-doped samples is presented in Fig.2.For instance,because S doping reduces the carrier concentration and also enhances impurity scattering,the electrical resistivity of the only S-doped samples is larger than that of the pristine sample at room temperature,as shown in Fig.2a.When both S and Sm are doped in Cu3SbSe4,the observed electrical resistivity highly depends on the relative contents of S and Sm.As shown in Fig.2c and d,at fixed S doping contentsof v=0.10 and 0.15,the electricalresistivity cannot be reduced with Sm contents (x) increasing.In contrast,when S doping content (y) is 0.05,enhanced Sm contents lead to a significant decrease in the resistivity,as shown in Fig.2b.Room temperature physical properties of CSS:(Sm-x,S-y)samples are listed in Table 1.The results reveal that S doping reduces the hole concentration,which is consistent with the results in Refs.
Fig.1 a XRD patterns of CSS:(Sm-x,S-y) samples:(1) PDF No.85-0003,(2) Cu3SbSe4,(3) Cu2.9925Sm0.0075SbSe4,(4) Cu2.975Sm0.025SbSe4,(5)Cu3SbSe3.95S0.05,(6) Cu2.995Sm0.005SbSe3.95S0.05,(7) Cu2.9925Sm0.0075SbSe3.95S0.05,(8) Cu3SbSe3.9S0.1,(9) Cu2.995Sm0.005SbSe3.9S0.1,(10)Cu2.9925Sm0.0075SbSe3.9S0.1,(11) Cu3SbSe3.85S0.15,(12) Cu2.995Sm0.005SbSe3.85S0.15 and (13) Cu2.9925Sm0.0075SbSe3.85S0.15;b SEM image of typical microstructure of fresh fracture surface of SPSed Cu2.975Sm0.025SbSe4;c secondary electron images of polished surface of SPSed Cu2.975Sm0.025SbSe4;d BSE image of polished surface of SPSed Cu2.975Sm0.025SbSe4 (black particles on surface being polishing agent Al2O3)
The temperature dependence of the thermopower of CSS:(Sm-x,S-y) is displayed in Fig.3.Figure 3a shows the thermopower of Cu3SbSe4-ySy(y=0,0.05,0.1,0.15)specimens.Although S doping reduces the carrier concentration,the thermopower of only S-doped Cu3SbSe4 is quite close to that of the pristine sample.This tendency is quite similar to the results reported by Skoug et al.
The power factor (PF=S2/ρ) is an indicator for the electrical transport properties of thermoelectric materials.The calculated PF of CSS:(Sm-x,S-y) is presented in Fig.4.The highest PF is observed for Cu3SbSe3.9S0.1(7.73×10-4 W·m-1·K-2) among the doped samples.However,because of the higher electrical resistivity and the lower thermopower values,no increase in PF of the doped samples compared with that of pristine Cu3SbSe4can be observed in the entire temperature range studied.
3.3 Thermal transport properties and phonon scattering mechanisms
The temperature dependence of the thermal conductivity (κ)is shown in Fig.5a.It can be seen that κ value of allspecimens drops with temperature increasing and κ value of the doped samples is lower than that of the pristine sample.In order to clarify the effect of S and Sm doping on κ,Fig.5c,d shows κ values of Cu3SbSe4-ySy(y=0,0.05, 0.10,0.15),Cu3-xSmxSbSe3.95S0.05 (x=0,0.0050, 0.0075),Cu3-xSmxSbSe3.9S0.1 (x=0,0.0050,0.0075) and Cu3-xSmxSbSe3.85S0.15 (x=0,0.005,0.0075),respectively.As can be seen from Fig.5c,κ value of all S-doped samples is lower than that of the pristine sample and decreases with S content increasing,which is consistent with the data in Refs.
Fig.2 Temperature dependence of electrical resistivity of a CSS:(Sm-x,S-y)(x=0 andy=0,0.05,0.10,0.15),b CSS:(Sm-x,S-y)(x=0,0.0050,0.0075 and y=0,0.05),c CSS:(Sm-x,S-y)(x=0,0.0050,0.0075 and y=0,0.10) and d CSS:(Sm-x,S-y)(x=0,0.0050,0.0075 and y=0,0.15)
Table 1 Nominal composition,ICP composition,carrier concentration (n) and carrier mobility(μ)of samples at room temperature
aContents of Cu,Sm,Se and S being normalized to content of Sb
Fig.3 Temperature dependence of thermopower of a CSS:(Sm-x,S-y)(x=0 andy=0,0.05,0.10,0.15),b CSS:(Sm-x.S-y)(x=0,0.0050,0.0075 and y=0,0.05),c CSS:(Sm-x,S-y)(x=0,0.0050,0.0075 and y=0,0.10) and d CSS:(Sm-x,S-y)(x=0,0.0050,0.0075 and y=0,0.15)
The lattice contribution of the thermal conductivity,κL,that can be obtained fromκL=κ-κe.κe is evaluated by the Wiedemann-Franz relation:κe=LσT,whereσis the measured electrical conductivity and L is the Lorenz number.The Lorenz number used here is obtained by fitting the measured thermopower (S) data via L=1.5+exp[-|S|/116]
Fig.4 Power factor as a function of temperature of a CSS:(Sm-x,S-y)(x=0 and y=0,0.05,0.10,0.15),b CSS:(Sm-x,S-y)(x=0,0.0050,0.0075 and y=0,0.05),c CSS:(Sm-x,S-y)(x=0,0.0050,0.0075 and y=0,0.10) and d CSS:(Sm-x,S-y)(x=0,0.0050,0.0075 and y=0,0.15)
In order to understand the phonon scattering mechanism of S/Sm co-doped Cu3-xSmxSbSe4-ySy,κL is estimated using the Callaway model
where x equals to
According to Matthiessen's rule
where
In a crystal lattice,point defect scattering originates from mass difference and strain fluctuations.The point defect scattering relaxation time (τPD) can be obtained through:
Fig.5 Temperature dependence of a total thermal conductivity and b lattice thermal conductivity of pristine and doped Cu3SbSe4 specimens;c temperature dependence of thermal conductivity for c CuSbSe4-ySy (x=0 and y=0,0.05,0.10,0.15) and d CSS:(Sm-x,S-y)(x=0,0.005,0.0075 and y=0,0.05)
Table 2 Average longitudinal acoustic velocity (vLA),transverse acoustic velocity (vTA/TA'),Grüneisen parameters (γTA/TA'/LA) and Debye temperatures (θDTA/TA'/LA) used in calculations from Ref.
whereτM andτS are relaxation time of the point defect scattering processes due to mass difference and strain fluctuations,respectively,V is the volume per atom,ΓM andΓS are the disorder scattering parameters due to mass difference and strain field fluctuations,respectively
whereκL,
Table 3 Calculated disorder scattering parameters of pristine and doped Cu3SbSe4 specimens according to values from Ref.
In addition to Umklapp and point defect scattering,it was also estimated the contribution of boundary scattering toκL.The relaxation time of boundary scattering is given byτBS=d/v
Figure 6a shows the room temperature lattice thermal conductivities calculated using the Callaway model on the assumption of combined scattering mechanisms (U,PD and B) according to the data from Ref.
The Sm content-dependentκL of Cu3-xSmxSbSe3.85S0.15(x=0,0.0050,and 0.0075) samples are shown in Fig.6c.The experimental results are close to the bottom pink line calculated according to the data from Ref.
3.4 Figure of Merit
The ZT values of all samples are displayed in Fig.7.Although the PF values of doped samples are lower than that of pristine Cu3SbSe4,the ZT values of most of the doped samples are higher than that of pristine Cu3SbSe4due to the fact that S and/or Sm doping increases point defect scattering.Specifically,ZT=0.55 is obtained at648 K for the sample with the nominal composition of Cu2.995Sm0.005SbSe3.95S0.05,amounting to a 55%increase compared to that of pristine Cu3SbSe4 studied here.
Fig.6 a Calculated lattice thermal conductivities of specimens at 325 K based on data from Ref.
Fig.7 Temperature dependence of figure of merit (ZT) of a CSS:(Sm-x,S-y)(x=0 andy=0,0.05,0.10,0.15),b CSS:(Sm-x,S-y)(x=0,0.0050,0.0075 and y=0,0.05),c CSS:(Sm-x,S-y)(x=0,0.0050,0.0075 and y=0,0.10) and d CSS:(Sm-x,S-y)(x=0,0.0050,0.0075 and y=0,0.15)
4 Conclusion
In summary,the thermoelectric properties of Sm and S codoped copper antimony selenides were studied in the temperature range of 300 K<T<650 K.The thermoelectric performance increases as a result of a drastic reduction in the thermal conductivity attributed to an enhanced point defect scattering of heat-carrying phonons.Sm doping introduces additional mass and strain field fluctuations,further reducing the low lattice thermal conductivity of the S-doped samples.As a result,a ZT of~0.55 at 648 K is attained for the sample with nominal composition of Cu2.995Sm0.005SbSe3.95S0.05,which corresponds to an almost 55%increase compared to the ZT of the pristine Cu3SbSe4 studied here.
Acknowledgements This work was financially supported by the German Research Foundation within the DFG Priority Program SPP1386 (No.WE 2803/2-2) and Federal Ministry for Economics Affairs and Energy (BMWI)(No.Nr 19U15006F).We also thank Dr.Angelika Veziridis for intensive discussions on the manuscript.
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