Analysis and design of resistance-wire heater in MOCVD reactor

QU Yu-xuan(曲毓萱)¹, WANG Bin(王斌)², HU Shi-gang(胡仕刚)³, WU Xiao-feng(吴笑峰)⁴, LI Zhi-ming(李志明)⁴, TANG Zhi-jun(唐志军)³, LI Jin(李劲)³, HU Ying-lu(胡莹璐)⁵

(1. Advanced Technology Generalization Institute of CNGC, Beijing 100089, China;
2. The Center of Coordination and Support of State Administration of Science,
Technology and Industry for National Defence, Beijing 100081, China;
3. School of Information and Electrical Engineering, Hunan University of Science and Technology,
Xiangtan 411201, China;
4. School of Information Science and Engineering, University of Jinan, Ji’nan 250022, China;
5. The 41st Institute of China Electronics Technology Group Corporation, Qingdao 266555, China)

Abstract:Metal organic chemical vapor deposition (MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position.

Key words:metal organic chemical vapor deposition (MOCVD); reactor design; thermal analysis; filament heating