Influence of InAs deposition thickness on the structural and optical properties of InAs quantum wires

Yuanli Wang1), Hua Cui2), Wen Lei1), Yahong Su3), Yonghai Chen1), Ju Wu1), and Zhanguo Wang1) 1) Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2) Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China 3) China Metallurgical Information and Standardization Research Institute, Beijing 100730, China

摘 要：The influence of InAs deposition thickness on the structural and optical properties of InAs/InAlAs quantum wires （QWR） superlattices （SLS） was studied. The transmission electron microscopy （TEM） results show that with increasing the InAs deposited thickness, the size uniformity and spatial ordering of InAs QWR SLS was greatly improved, but threading dislocations initiated from InAs nanowires for the sample with 6 monolayers （MLs） InAs deposition. In addition, the zig-zag features along the extending direc-tion and lateral interlink of InAs nanowires were also observed. The InAs nanowires, especially for the first period, were laterally compact. These structural features may result in easy tunneling and coupling of charge carriers between InAs nanowires and will hamper their device applications to some extent. Some suggestions are put forward for further improving the uniformity of the stack-ed InAs QWRs, and for suppressing the formation of the threading dislocations in InAs QWR SLS.

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