Comparison of measurements and simulation results in 300mm CZ silicon crystal growth
来源期刊：Rare Metals2007年第6期
论文作者：GAO Yu, TU Hailing, ZHOU Qigang, DAI Xiaolin, and XIAO Qinghua General Research Institute of Non-ferrous Metals, Beijing
文章页码：607 - 610
摘 要：A special thermal modeling tool, CrysVUn, which was developed by Crystal Growth Laboratory (CGL) of Fraunhofer Institute of Integrated Systems and Devices Technology in Erlangen of Germany, was used for numerical analysis of growth interface situation. The heat transportation, argon flow and melt convection have been considered. Cauchy’s first and second laws of motion have been the governing partial equations for stress calculation. The measurement results and simulation results were compared and the interface shape and thermal stress distribution during 300 mm Czochralski (CZ) silicon crystal growth with different growth rates were predicted.
GAO Yu, TU Hailing, ZHOU Qigang, DAI Xiaolin, and XIAO Qinghua General Research Institute of Non-ferrous Metals, Beijing 100088
摘 要：A special thermal modeling tool, CrysVUn, which was developed by Crystal Growth Laboratory (CGL) of Fraunhofer Institute of Integrated Systems and Devices Technology in Erlangen of Germany, was used for numerical analysis of growth interface situation. The heat transportation, argon flow and melt convection have been considered. Cauchy’s first and second laws of motion have been the governing partial equations for stress calculation. The measurement results and simulation results were compared and the interface shape and thermal stress distribution during 300 mm Czochralski (CZ) silicon crystal growth with different growth rates were predicted.
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