Electrolyte composition and galvanic corrosion for ruthenium/copper electrochemical mechanical polishing
来源期刊：Rare Metals2020年第11期
论文作者：Yan-Fei Bian Wen-Jie Zhai Yuan-Yuan Cheng Bao-Quan Zhu
文章页码：1300 - 1306
摘 要：Electrochemical mechanical polishing(ECMP)is a new and highly promising technology.A specific challenge for integrating Ru as barrier in Cu interconnect structures is the galvanic corrosion of Cu that occurs during ECMP.To mitigate the problem,the benzotriazole(BTA)and ascorbic acid(AA) were chosen as selective anodic and cathodic inhibitors for Cu and Ru,respectively.The optimization of electrolytes at different pHs including BTA,hydroxyethylidenediphosphoric acid(HEDP),and AA were investigated using electrochemical methods.The Ru/Cu removal rate and the planarization efficiency during Ru/Cu ECMP can be approximated using electrochemical measurements of the removal rate,with and without surface abrasion.Chemical systems that exhibit a 1:1 selectivity between the barrier layer and copper would be ideal for the barrier removal step of ECMP.Optimized slurry consists of 20.0 wt% HEDP,0.5 wt% BTA,and 0.3 wt%AA at pH 2.2.Using the optimized slurry,the selectivity of Ru to Cu is near 1.Electrochemical measurements of open circuit potentials,potentiodynamic polarization,and impedance spectroscopy were performed to investigate the galvanic corrosion between ruthenium and copper.
Yan-Fei Bian1，Wen-Jie Zhai1，Yuan-Yuan Cheng2，Bao-Quan Zhu1
1. School of Mechatronics Engineering, Harbin Institute of Technology2. School of Civil Engineering, Harbin Institute of Technology
摘 要：Electrochemical mechanical polishing(ECMP)is a new and highly promising technology.A specific challenge for integrating Ru as barrier in Cu interconnect structures is the galvanic corrosion of Cu that occurs during ECMP.To mitigate the problem,the benzotriazole(BTA)and ascorbic acid(AA) were chosen as selective anodic and cathodic inhibitors for Cu and Ru,respectively.The optimization of electrolytes at different pHs including BTA,hydroxyethylidenediphosphoric acid(HEDP),and AA were investigated using electrochemical methods.The Ru/Cu removal rate and the planarization efficiency during Ru/Cu ECMP can be approximated using electrochemical measurements of the removal rate,with and without surface abrasion.Chemical systems that exhibit a 1:1 selectivity between the barrier layer and copper would be ideal for the barrier removal step of ECMP.Optimized slurry consists of 20.0 wt% HEDP,0.5 wt% BTA,and 0.3 wt%AA at pH 2.2.Using the optimized slurry,the selectivity of Ru to Cu is near 1.Electrochemical measurements of open circuit potentials,potentiodynamic polarization,and impedance spectroscopy were performed to investigate the galvanic corrosion between ruthenium and copper.
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