Photoelectrochemical properties of BiVO4 thin films with NaOH chemical treatment
来源期刊：Rare Metals2019年第5期
论文作者：Dong-Dong Lv Jiao-Feng Liu Zheng Zhang Ying-You Ma Yan Liang Zhi-Tai Zhou Wei-Chang Hao
文章页码：446 - 452
摘 要：BiVO4 thin films were prepared by a mature and simple electrochemical deposition method on F-doped SnO2 substrate electrode（FTO）. The influence of a chemical treatment using sodium hydroxide（NaOH） on the photoelectrochemical properties of BiVO4 thin films was studied. It was found that NaOH can etch the crystal surface of BiVO4, which leads to the increase in specific surface area and improved photoelectrochemical activity.The photocurrent density of the BiVO4 thin films showed an enhancement of photoelectronic current from 0.50 to0.65 mAácm-2 at 1.23 V（vs. RHE） after the treatment for5 h by NaOH, which supplies a stronger potential for H2 O oxidation.
Dong-Dong Lv，Jiao-Feng Liu，Zheng Zhang，Ying-You Ma，Yan Liang，Zhi-Tai Zhou，Wei-Chang Hao
摘 要：BiVO4 thin films were prepared by a mature and simple electrochemical deposition method on F-doped SnO2 substrate electrode（FTO）. The influence of a chemical treatment using sodium hydroxide（NaOH） on the photoelectrochemical properties of BiVO4 thin films was studied. It was found that NaOH can etch the crystal surface of BiVO4, which leads to the increase in specific surface area and improved photoelectrochemical activity.The photocurrent density of the BiVO4 thin films showed an enhancement of photoelectronic current from 0.50 to0.65 mAácm-2 at 1.23 V（vs. RHE） after the treatment for5 h by NaOH, which supplies a stronger potential for H2 O oxidation.
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