Current-voltage characteristics with several threshold currents in insulating low-doped La1–xSrxMnO3（x=0.10） thin films
来源期刊：Journal of Rare Earths2008年第4期
论文作者：赵昆 丰家峰 何萌 吕惠宾 金奎娟 周岳亮 杨国桢
文章页码：567 - 570
摘 要：The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves at 120 K showed hysteresis with several threshold currents corresponding to the switching in resistance to metastable low resistance states, and finally, four closed loops were formed. A mode was proposed, which was based on the low-temperature canted antiferromagnetism ordering for a lightly doped insulating regime.
赵昆，丰家峰，何萌，吕惠宾，金奎娟，周岳亮，杨国桢
摘 要：The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves at 120 K showed hysteresis with several threshold currents corresponding to the switching in resistance to metastable low resistance states, and finally, four closed loops were formed. A mode was proposed, which was based on the low-temperature canted antiferromagnetism ordering for a lightly doped insulating regime.
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