简介概要

Rare earth doped CaCu3Ti4O12 electronic ceramics for high frequency applications

来源期刊:Journal of Rare Earths2010年第1期

论文作者:慕春红 张怀武 刘颖力 宋远强 刘鹏

文章页码:43 - 47

摘    要:Ca1-xRxCu3Ti4O12(R=La,Y,Gd;x=0,0.1,0.2,0.3) electronic ceramics were fabricated by conventional solid-state reaction method.The microstructure and dielectric properties as well as impedance behavior were carefully investigated.XRD results showed that the secondary phases with the general formula R2Ti2O7 existed at grain boundaries of rare earth doped ceramics,which inhibited abnormal grain growth.The dielectric constant decreased from 4×105 in pure CaCu3Ti4O12(CCTO) ceramics to 2×103 with rare earth doping.However,all samples showed high dielectric constant in broad frequency range(<10 MHz).The cutoff frequency(f0) was remarkably shifted to higher frequency from 13 MHz(pure CCTO ceramics) to 80 MHz(Gd-doped CCTO ceramics).Meanwhile,the dielectric loss tangent rapidly decreased approximately 10 times.These improvements of dielectric properties by rare earth doping are very useful in wide frequency chip capacitor and LTCC devices.

详情信息展示

Rare earth doped CaCu3Ti4O12 electronic ceramics for high frequency applications

慕春红1,张怀武1,刘颖力1,宋远强1,刘鹏2

1. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China2. School of Physics and Information Technology,Shaanxi Normal University

摘 要:Ca1-xRxCu3Ti4O12(R=La,Y,Gd;x=0,0.1,0.2,0.3) electronic ceramics were fabricated by conventional solid-state reaction method.The microstructure and dielectric properties as well as impedance behavior were carefully investigated.XRD results showed that the secondary phases with the general formula R2Ti2O7 existed at grain boundaries of rare earth doped ceramics,which inhibited abnormal grain growth.The dielectric constant decreased from 4×105 in pure CaCu3Ti4O12(CCTO) ceramics to 2×103 with rare earth doping.However,all samples showed high dielectric constant in broad frequency range(<10 MHz).The cutoff frequency(f0) was remarkably shifted to higher frequency from 13 MHz(pure CCTO ceramics) to 80 MHz(Gd-doped CCTO ceramics).Meanwhile,the dielectric loss tangent rapidly decreased approximately 10 times.These improvements of dielectric properties by rare earth doping are very useful in wide frequency chip capacitor and LTCC devices.

关键词:

<上一页 1 下一页 >

有色金属在线官网  |   会议  |   在线投稿  |   购买纸书  |   科技图书馆

中南大学出版社 技术支持 版权声明   电话:0731-88830515 88830516   传真:0731-88710482   Email:administrator@cnnmol.com

互联网出版许可证:(署)网出证(京)字第342号   京ICP备17050991号-6      京公网安备11010802042557号