Research on Performance of ZnS∶TbF3 Thin Film Electroluminescence Device
来源期刊：JOURNAL OF RARE EARTHS2003年第1期
论文作者：徐叙瑢 杨胜 何大伟 王永生 关亚菲 权善玉
Key words：luminescence; rf magnetron sputtering; electron-beam evaporation; electroluminescence; rare earths;
Abstract: The electroluminescence of ZnS doped with terbium fluoride thin films prepared by radio frequency magnetron sputtering method was reported. The characteristics of the ZnS∶TbF3 thin film electroluminescence devices, such as film characteristics of the ZnS∶Tb active layer, substrate temperatures during magnetron sputtering and Tb concentration of the active layer, were systematically investigated. The results show that annealing can evidently improve the luminescence performance of the luminescence device.
徐叙瑢1，杨胜1，何大伟1，王永生1，关亚菲1，权善玉1
(1.Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044, China;
2.Shenyang University of Technology, 1100230, China)
Abstract:The electroluminescence of ZnS doped with terbium fluoride thin films prepared by radio frequency magnetron sputtering method was reported. The characteristics of the ZnS∶TbF3 thin film electroluminescence devices, such as film characteristics of the ZnS∶Tb active layer, substrate temperatures during magnetron sputtering and Tb concentration of the active layer, were systematically investigated. The results show that annealing can evidently improve the luminescence performance of the luminescence device.
Key words:luminescence; rf magnetron sputtering; electron-beam evaporation; electroluminescence; rare earths;
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