Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
来源期刊：Acta Metallurgica Sinica2019年第12期
论文作者：Ying-Feng He Mei-Ling Li San-Jie Liu Hui-Yun Wei Huan-Yu Ye Yi-Meng Song Peng Qiu Yun-Lai An Ming-Zeng Peng Xin-He Zheng
文章页码：1530 - 1536
摘 要：In this work,the GaN thin films were directly deposited on multilayer graphene（MLG） by plasma-enhanced atomic layer deposition.The deposition was carried out at a low temperature using triethylgallium（TEGa） precursor and Ar/N2/H2 plasma.Chemical properties of the bulk GaN and GaN-graphene interface were analyzed using X-ray photoelectron spectroscopy.The sharp interface between GaN and graphene was verified via X-ray reflectivity and transmission electron microscope.The microstructures and the nucleation behaviors of the GaN grown on graphene have been also studied.The results of grazing incidence X-ray diffraction and Raman spectrum indicate that the as-deposited sample is polycrystalline with wurtzite structure and has a weakly tensile stress.Optical properties of the sample were investigated by photoluminescence（PL） at room temperature.The successful growth of GaN on MLG at a low temperature opens up the possibility of ameliorating the performance of electronic and optical devices based on GaN/graphene heterojunction.
Ying-Feng He，Mei-Ling Li，San-Jie Liu，Hui-Yun Wei，Huan-Yu Ye，Yi-Meng Song，Peng Qiu，Yun-Lai An，Ming-Zeng Peng，Xin-He Zheng
School of Mathematics and Physics,Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science,University of Science and Technology Beijing
摘 要：In this work,the GaN thin films were directly deposited on multilayer graphene（MLG） by plasma-enhanced atomic layer deposition.The deposition was carried out at a low temperature using triethylgallium（TEGa） precursor and Ar/N2/H2 plasma.Chemical properties of the bulk GaN and GaN-graphene interface were analyzed using X-ray photoelectron spectroscopy.The sharp interface between GaN and graphene was verified via X-ray reflectivity and transmission electron microscope.The microstructures and the nucleation behaviors of the GaN grown on graphene have been also studied.The results of grazing incidence X-ray diffraction and Raman spectrum indicate that the as-deposited sample is polycrystalline with wurtzite structure and has a weakly tensile stress.Optical properties of the sample were investigated by photoluminescence（PL） at room temperature.The successful growth of GaN on MLG at a low temperature opens up the possibility of ameliorating the performance of electronic and optical devices based on GaN/graphene heterojunction.
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