Enhanced deposition of Zn O films by Li doping using radio frequency reactive magnetron sputtering
来源期刊：International Journal of Minerals Metallurgy and Materials2015年第10期
论文作者：Liang-xian Chen Sheng Liu Cheng-ming Li Yi-chao Wang Jin-long Liu Jun-jun Wei
文章页码：1108 - 1114
摘 要：Radio frequency（RF） reactive magnetron sputtering was utilized to deposit Li-doped and undoped zinc oxide（Zn O） films on silicon wafers. Various Ar/O2 gas ratios by volume and sputtering powers were selected for each deposition process. The results demonstrate that the enhanced Zn O films are obtained via Li doping. The average deposition rate for doped Zn O films is twice more than that of the undoped films. Both atomic force microscopy and scanning electron microscopy studies indicate that Li doping significantly contributes to the higher degree of crystallinity of wurtzite–Zn O. X-ray diffraction analysis demonstrates that Li doping promotes the（002） preferential orientation in Li-doped Zn O films. However, an increase in the Zn O lattice constant, broadening of the（002） peak and a decrease in the peak integral area are observed in some Li-doped samples, especially as the form of Li2 O. This implies that doping with Li expands the crystal structure and thus induces the additional strain in the crystal lattice. The oriented-growth Li-doped Zn O will make significant applications in future surface acoustic wave devices.
Liang-xian Chen1，Sheng Liu1，Cheng-ming Li1，Yi-chao Wang2，Jin-long Liu1，Jun-jun Wei1
1. Institute for Advanced Materials and Technology,University of Science and Technology Beijing2. School of Electrical and Computer Engineering,RMIT University
摘 要：Radio frequency（RF） reactive magnetron sputtering was utilized to deposit Li-doped and undoped zinc oxide（Zn O） films on silicon wafers. Various Ar/O2 gas ratios by volume and sputtering powers were selected for each deposition process. The results demonstrate that the enhanced Zn O films are obtained via Li doping. The average deposition rate for doped Zn O films is twice more than that of the undoped films. Both atomic force microscopy and scanning electron microscopy studies indicate that Li doping significantly contributes to the higher degree of crystallinity of wurtzite–Zn O. X-ray diffraction analysis demonstrates that Li doping promotes the（002） preferential orientation in Li-doped Zn O films. However, an increase in the Zn O lattice constant, broadening of the（002） peak and a decrease in the peak integral area are observed in some Li-doped samples, especially as the form of Li2 O. This implies that doping with Li expands the crystal structure and thus induces the additional strain in the crystal lattice. The oriented-growth Li-doped Zn O will make significant applications in future surface acoustic wave devices.
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