简介概要

SPIN-DEPENDENT TUNNELING MAGNETORESISTANCE IN Fe-O/AlOx/Fe-O FILMS

来源期刊:Acta Metallurgica Sinica2002年第2期

论文作者:S.Luo P.Wu L.Q.Pan Y.Tian H.Qiu F.P.Wang

Key words:spin-dependent tunneling. magnetoresistance. magnetic thin film;

Abstract: Fe-O/AlOx/Fe-O tunnel junctions were prepared by reactive magnetron sputteringunder mixed working gas Ar+2%O2. The insulating AlOx layer of 1-2nm thicknesswas sputtered directly from Al2O3 target. Electrode layers were made of 80at.% ironand 20at.% oxygen. Bottom Fe-O electrode deposited on glass substrate annealedat 473K at the pressure of 3× 10-4Pa for an hour shows disparate crystalline grainstructure, lower electrical resistance and coercivity compared to the as-deposited topelectrode. Only crystalline structrure of α-Fe is observed in both electrodes. Largetunnel magnetoresistance in large Fe-O/AlOx/Fe-O junctions of 1cm2 is observed atroom temperature and the Ⅰ-Ⅴ characteristic curve of the junction shows that thebarrier of the junction is of high quality.

详情信息展示

SPIN-DEPENDENT TUNNELING MAGNETORESISTANCE IN Fe-O/AlOx/Fe-O FILMS

S.Luo1,P.Wu1,L.Q.Pan1,Y.Tian1,H.Qiu1,F.P.Wang1

(1.Beijing Keda-Tianyu Microelectronic Materials Technology Development Co. Ltd.,Rm105 Keji Building,30 Xueyuan Rd. Haidian District,Beijing 100083,China)

Abstract:Fe-O/AlOx/Fe-O tunnel junctions were prepared by reactive magnetron sputteringunder mixed working gas Ar+2%O2. The insulating AlOx layer of 1-2nm thicknesswas sputtered directly from Al2O3 target. Electrode layers were made of 80at.% ironand 20at.% oxygen. Bottom Fe-O electrode deposited on glass substrate annealedat 473K at the pressure of 3× 10-4Pa for an hour shows disparate crystalline grainstructure, lower electrical resistance and coercivity compared to the as-deposited topelectrode. Only crystalline structrure of α-Fe is observed in both electrodes. Largetunnel magnetoresistance in large Fe-O/AlOx/Fe-O junctions of 1cm2 is observed atroom temperature and the Ⅰ-Ⅴ characteristic curve of the junction shows that thebarrier of the junction is of high quality.

Key words:spin-dependent tunneling. magnetoresistance. magnetic thin film;

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