Front and Back contact engineering for high-efficient and low-cost hydrothermal derived Sb2（S, Se）3 solar cells by using FTO/SnO2 and carbon
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2020年第23期
论文作者：Liquan Yao Limei Lin Hui Liu Fengying Wu Jianmin Li Shuiyuan Chen Zhigao Huang Guilin Chen
摘 要：Antimony chalcogenide Sb2（S, Se）3 is attracting a lot of attention as photovoltaic absorber owing to its rewarding photoelectric properties, low toxicity, and earth abundance. However, its device efficiency is still limited by the absorber material quality and device interface recombination. In this work, a fluorinedoped tin oxide（FTO） substrate with ultra-thin SnO2 layer and a low-cost stabilized carbon paste are introduced as a front and back contact layer respectively in Sb2（S, Se）3 based planar solar cells. Over 5.2% efficiency is demonstrated in the structure of FTO/SnO2/Cd S/Sb2（S, Se）3/Carbon/Ag, where the Sb2（S,Se）3 is prepared by hydrothermal technique. The complementary device physics characterizations reveal that the interfacial recombination between TCO and Cd S is significantly suppressed by the introduction of ultra-thin SnO2 layer, which is profited from the leakage protection and bandgap offset engineering by its high resistivity and suitable conduction band minimum. Meanwhile, the successful adoption of the lowcost stabilized carbon as a back contact here shows an enormous potential to replace the conventional organic hole transport materials and noble metal. We hope this work can provide positive guidance to optimize Sb2（S, Se）3 based planar solar cells in the future.
Liquan Yao1,2，Limei Lin1,3，Hui Liu1，Fengying Wu1，Jianmin Li4，Shuiyuan Chen1,2，Zhigao Huang1,2，Guilin Chen1,2,3
1. Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials,College of Physics and Energy,Fujian Normal University2. Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage4. Department of Physics,The Chinese University of Hong Kong
摘 要：Antimony chalcogenide Sb2（S, Se）3 is attracting a lot of attention as photovoltaic absorber owing to its rewarding photoelectric properties, low toxicity, and earth abundance. However, its device efficiency is still limited by the absorber material quality and device interface recombination. In this work, a fluorinedoped tin oxide（FTO） substrate with ultra-thin SnO2 layer and a low-cost stabilized carbon paste are introduced as a front and back contact layer respectively in Sb2（S, Se）3 based planar solar cells. Over 5.2% efficiency is demonstrated in the structure of FTO/SnO2/Cd S/Sb2（S, Se）3/Carbon/Ag, where the Sb2（S,Se）3 is prepared by hydrothermal technique. The complementary device physics characterizations reveal that the interfacial recombination between TCO and Cd S is significantly suppressed by the introduction of ultra-thin SnO2 layer, which is profited from the leakage protection and bandgap offset engineering by its high resistivity and suitable conduction band minimum. Meanwhile, the successful adoption of the lowcost stabilized carbon as a back contact here shows an enormous potential to replace the conventional organic hole transport materials and noble metal. We hope this work can provide positive guidance to optimize Sb2（S, Se）3 based planar solar cells in the future.
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