Development of Integrated Micro Nano-positioning xy-stage based on Bulk Micro-machining
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2009年第S1期
论文作者：王家畴
文章页码：195 - 199
摘 要：For operation and manipulation with nanometric positioning precision,an integrated micro nano-positioning xy-stage is developed,which is mainly composed of a silicon-based xy-stage,comb-driven actuator and displacement sensor.The high-aspect-ratio comb-driven xy-stage is achieved by deep reactive ion etching （DRIE） in both sides of wafer.The displacement sensor is mainly composed of four vertical sidewall surface piezoresistor connected to form a full Wheatstone bridge.A simple vertical sidewall surface piezoresistor process which improves on the basis of the conventional surface piezoresistor technique is proposed.The experimental results verify the integrated micro nano-positioning xy-stage including the vertical sidewall surface piezoresistor technique.The sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV/μm without amplification and the linearity is better than 0.814%.Under 30 V driving voltage,a ±10 μm single-axis displacement is measured without crosstalk.The displacement resolution of the micro xy-stage is better than 10.8 nm.
王家畴
State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of SciencesState Key Laboratory of Robotic and System,Harbin Institute of Technology
摘 要：For operation and manipulation with nanometric positioning precision,an integrated micro nano-positioning xy-stage is developed,which is mainly composed of a silicon-based xy-stage,comb-driven actuator and displacement sensor.The high-aspect-ratio comb-driven xy-stage is achieved by deep reactive ion etching （DRIE） in both sides of wafer.The displacement sensor is mainly composed of four vertical sidewall surface piezoresistor connected to form a full Wheatstone bridge.A simple vertical sidewall surface piezoresistor process which improves on the basis of the conventional surface piezoresistor technique is proposed.The experimental results verify the integrated micro nano-positioning xy-stage including the vertical sidewall surface piezoresistor technique.The sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV/μm without amplification and the linearity is better than 0.814%.Under 30 V driving voltage,a ±10 μm single-axis displacement is measured without crosstalk.The displacement resolution of the micro xy-stage is better than 10.8 nm.
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