Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2018年第6期
论文作者：汪鹏飞 朱慧 ZHANG Yingqiao FENG Shiwei GUO Chunsheng ZHANG Yamin MENG Xiao QI Qiong
文章页码：1360 - 1364
摘 要：The（001） oriented BiFeO3 thin film was deposited on the Nb: SrTiO3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO3/Nb: SrTiO3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of-0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.
汪鹏飞1，朱慧1，ZHANG Yingqiao1，FENG Shiwei1，GUO Chunsheng1，ZHANG Yamin1，MENG Xiao1，QI Qiong2
1. Faculty of Information Technology, Beijing University of Technology2. National Engineering Research Center for Optoelectronics Devices, Institute of Semiconductors, Chinese Academy of Sciences
摘 要：The（001） oriented BiFeO3 thin film was deposited on the Nb: SrTiO3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO3/Nb: SrTiO3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of-0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.
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